We performed in situ high-pressure synchrotron x-ray diffraction (XRD) and electrical transport measurements on topological semimetal TaSb₂ in diamond anvil cells with pressures up to 60.0–63.0 GPa. No evident trace of structural phase transitions is observed from our XRD. A fit of the volume versus pressure data by using the third-order Birch–Murnaghan equation of state yields the bulk modulus $B_0$= 131.2 ± 3.4 GPa and its first-order derivative $B_0^{\prime }$= 6 ± 0.3. From ambient pressure to 27.8 GPa, the low-temperature conduction behaviors of TaSb₂ stay almost unchanged, exhibiting a power law with the exponent around 3; meanwhile, the magnetoresistance (MR) at 5 K follows a same relationship of MR∝B^m with m= 1.45 ± 0.10. These results imply that the topological semimetal state of TaSb₂ may be robust subjected to pressure, at least to 27.8 GPa.

我们对压力高达60.0-63.0 GPa的金刚石砧室中的拓扑半金属TaSb ₂进行了原位高压同步加速器X射线衍射（XRD）和电迁移测量。从我们的XRD中没有观察到明显的结构相变痕迹。通过使用三阶Birch-Murnaghan状态方程拟合体积与压力的关系，可以得出体积模量${乙}_0$= 131.2±3.4 GPa及其一阶导数 ${乙}_0^{\prime }$= 6±0.3。从环境压力到27.8 GPa，TaSb ₂的低温传导行为几乎保持不变，表现出幂律，指数在3左右。同时，在5 K时的磁阻（MR）遵循MR ∝ B ^m的相同关系，其中m = 1.45±0.10。这些结果表明，TaSb ₂的拓扑半金属态在至少27.8 GPa的压力下会很坚固。