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Preparation of Cu 2 Sn 1- x Ge x S 3 bulk single crystals by chemical vapor transport with iodine
Journal of Crystal Growth ( IF 1.7 ) Pub Date : 2018-09-01 , DOI: 10.1016/j.jcrysgro.2018.06.031
Riki Fujita , Nobuo Saito , Kenichiro Kosugi , Kunihiko Tanaka

Abstract Bulk crystals of monoclinic Cu2Sn1−xGexS3 were prepared by chemical vapor transport with iodine. The samples were investigated using electron-probe microanalysis, transmission electron microscopy, Raman spectroscopy and X-ray diffraction (XRD). All of the samples had a Cu-rich and S-poor composition. As the Ge content increased, the XRD peaks shifted to higher angle, the Raman peaks shifted to higher wavenumber, and the lattice constants decreased. Selected-area electron diffraction patterns showed that the samples were single crystal and had a monoclinic structure.

中文翻译:

Cu 2 Sn 1- x Ge x S 3 块状单晶的碘化学气相传输制备

摘要 单斜 Cu2Sn1−xGexS3 块状晶体是通过碘的化学气相传输制备的。使用电子探针微量分析、透射电子显微镜、拉曼光谱和 X 射线衍射 (XRD) 对样品进行了研究。所有样品都具有富铜和贫硫成分。随着Ge含量的增加,XRD峰向更高的角度移动,拉曼峰向更高的波数移动,晶格常数降低。选区电子衍射图表明样品为单晶,具有单斜结构。
更新日期:2018-09-01
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