Abstract The availability of high quality, free-standing GaN substrates enables new device applications in III-nitrides, especially for vertical device structures. With the introduction of these native substrates, the properties of nitrides are no longer dominated by defects introduced by heteroepitaxial growth. However, additional materials challenges are coming to the forefront that need to be understood and surmounted in order to allow homoepitaxial devices to achieve their full potential. In this paper, 2 μm of UID GaN are grown simultaneously by MOCVD on three commercially sourced 2″ HVPE wafers. By doing so, the substrates are exposed to the exact same growth conditions and the influence of the substrate can be unambiguously identified. The results are presented in regards to the effects of the substrates on epitaxial film morphology, uniformity, impurity incorporation, substrate/epitaxy interface, and electrical properties.

中文翻译：

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HVPE衬底对MOCVD生长GaN同质外延的影响

摘要 高质量、独立式 GaN 衬底的可用性使 III 族氮化物的新器件应用成为可能，特别是对于垂直器件结构。随着这些原生衬底的引入，氮化物的特性不再受异质外延生长引入的缺陷的支配。然而，为了让同质外延器件发挥其全部潜力，需要理解和克服额外的材料挑战。在本文中，2 μm 的 UID GaN 通过 MOCVD 在三个商业采购的 2" HVPE 晶片上同时生长。通过这样做，基板暴露于完全相同的生长条件，并且可以明确识别基板的影响。结果是关于衬底对外延膜形态的影响，