Distributed x-ray radiation dosimetry is crucial in diverse security areas with significant environmental and human impacts such as nuclear waste management, radiotherapy, or radioprotection devices. We present a fast, real-time dosimetry detection system based on flexible oxide thin-film transistors that show a quantitative shift in threshold voltage of up to 3.4 V/gray upon exposure to ionizing radiation. The transistors use indium-gallium-zinc-oxide as a semiconductor and a multilayer dielectric based on silicon oxide and tantalum oxide. Our measurements demonstrate that the threshold voltage shift is caused by the accumulation of positive ionization charge in the dielectric layer due to high-energy photon absorption in the high-Z dielectric. The high mobility combined with a steep subthreshold slope of the transistor allows for fast, reliable, and ultralow-power readout of the deposited radiation dose. The order-of-magnitude variation in transistor channel impedance upon exposure to radiation makes it possible to use a low-cost, passive radiofrequency identification sensor tag for its readout. In this way, we demonstrate a passive, programmable, wireless sensor that reports in real time the excess of critical radiation doses.

中文翻译：

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基于柔性辐射敏感氧化物场效应晶体管的无源射频X射线剂量计标签。

分布式X射线辐射剂量测定法在具有重大环境和人类影响的各种安全领域中至关重要，例如核废料管理，放射疗法或放射防护设备。我们提出了一种基于柔性氧化物薄膜晶体管的快速，实时的剂量学检测系统，该系统在暴露于电离辐射后显示出阈值电压的定量偏移，最高可达3.4 V /灰色。晶体管使用铟镓锌氧化物作为半导体和基于氧化硅和氧化钽的多层电介质。我们的测量结果表明，阈值电压偏移是由于高Z中的高能光子吸收导致介电层中正电离电荷的积累引起的。电介质。高迁移率与陡峭的亚阈值晶体管相结合，可以快速，可靠和超低功率地读取沉积的辐射剂量。晶体管通道阻抗在暴露于辐射后的数量级变化使得可以使用低成本的无源射频识别传感器标签进行读取。这样，我们演示了一种无源，可编程的无线传感器，该传感器可以实时报告超出临界辐射剂量的情况。