Anomalous Nonlinear Shot Noise at High Voltage Bias.,Nano Letters

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Anomalous Nonlinear Shot Noise at High Voltage Bias.
Nano Letters ( IF 9.6 ) Pub Date : 2018-07-09 , DOI: 10.1021/acs.nanolett.8b02176
Sumit Tewari ₁ , Jan van Ruitenbeek ₁

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Since the work of Walter Schottky, it is known that the shot-noise power for a completely uncorrelated set of electrons increases linearly with the time-averaged current. At zero temperature and in the absence of inelastic scattering, the linearity relation between noise power and average current is quite robust, in many cases even for correlated electrons. Through high-bias shot-noise measurements on single Au atom point contacts, we find that the noise power in the high-bias regime shows highly nonlinear behavior even leading to a decrease in shot noise with voltage. We explain this nonlinearity using a model based on quantum interference of electron waves with varying path difference due to scattering from randomly distributed defect sites in the leads, which makes the transmission probability for these electrons both energy and voltage dependent.

中文翻译：

高压偏置下的非线性非线性散粒噪声。

由于沃尔特·肖特基（Walter Schottky）的工作，众所周知，一组完全不相关的电子的散粒噪声功率随时间平均电流线性增加。在零温度和没有非弹性散射的情况下，噪声功率与平均电流之间的线性关系非常稳健，即使在许多情况下，即使对于相关的电子也是如此。通过在单个Au原子点触点上进行高偏置散粒噪声测量，我们发现高偏置状态下的噪声功率表现出高度的非线性行为，甚至导致随电压降低散粒噪声。我们使用基于电子波的量子干扰的模型来解释这种非线性，该电子波的量子因从引线中随机分布的缺陷部位的散射而引起的路径差变化而变化，

更新日期：2018-06-29

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