Gigahertz Integrated Circuits Based on Complementary Black Phosphorus Transistors,Advanced Electronic Materials

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Gigahertz Integrated Circuits Based on Complementary Black Phosphorus Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-06-28 , DOI: 10.1002/aelm.201800274
Li Chen _{1,

2} , Si Li _{3,

4} , Xuewei Feng _{1,

2} , Lin Wang _{1,

2} , Xin Huang _{1,

2} , Benjamin C.-K. Tee _{2,

3,

4} , Kah-Wee Ang _{1,

2}

Affiliation

Black phosphorus (BP) has attracted enormous interest for logic applications due to its unique electronic properties. However, pristine BP exhibits predominant p‐type channel conductance, which limits the realization of complementary circuits unless an effective n‐type doping is found. Here, a practical approach to transform the conductivity of BP from p‐type to n‐type via a spatially controlled aluminum (Al) doping is proposed. Symmetrical threshold voltage for the pair of p‐type and n‐type BP field‐effect transistors can be achieved by tuning the Al doping concentration. The complementary inverter circuit shows a clear logic inversion with a high voltage gain of up to ≈11 at a supply voltage (V_DD) of 1.5 V. Simultaneously, a high noise margin of 0.27 × V_DD is achieved for both low (NM_L) and high (NM_H) input voltages, indicating excellent noise immunity. Moreover, a three‐stage ring oscillator with a theoretical frequency above 1.8 GHz and microwatt level power dissipation is modeled, which shows a low propagation delay per stage. This study demonstrates a practical approach to fabricate high performance complementary integrated circuits on a homogenous BP channel material, paving the way toward complex cascaded circuits and sensor interface applications.

中文翻译：

基于互补黑磷晶体管的千兆赫集成电路

黑磷（BP）由于其独特的电子特性而引起了逻辑应用的极大兴趣。但是，原始BP表现出主要的p型沟道电导，除非发现有效的n型掺杂，否则它会限制互补电路的实现。在此，提出了一种通过空间控制的铝（Al）掺杂将BP电导率从p型转变为n型的实用方法。可以通过调整Al掺杂浓度来实现p型和n型BP场效应晶体管对的对称阈值电压。互补反相器电路显示清晰的逻辑反相，在1.5 V的电源电压（V _DD）时具有高达≈11的高电压增益。同时，具有0.27× V _DD的高噪声容限在低（NM _L）和高（NM _H）输入电压下均实现了“噪声抑制”，这表明其具有出色的抗扰性。此外，对三级环形振荡器进行了建模，其理论频率高于1.8 GHz，功耗为微瓦级，显示出每级较低的传播延迟。这项研究展示了一种在同质BP通道材料上制造高性能互补集成电路的实用方法，为复杂的级联电路和传感器接口应用铺平了道路。

更新日期：2018-06-28

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