A well-grown β-Ga2O3 microrod array formed from GaOOH on a Si (100) substrate and growth mechanism study†,CrystEngComm

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A well-grown β-Ga2O3 microrod array formed from GaOOH on a Si (100) substrate and growth mechanism study†
CrystEngComm ( IF 2.6 ) Pub Date : 2018-06-30 00:00:00 , DOI: 10.1039/c8ce00658j
Junhua Zhang _{1,

2,

3,

4} , Shujie Jiao _{1,

2,

3,

4} , Yongbiao Wan _{1,

2,

3,

4} , Shiyong Gao _{1,

2,

3,

4} , Dongbo Wang _{1,

2,

3,

4} , JinZhong Wang _{1,

2,

3,

4}

Affiliation

A simple two-step hydrothermal method was used to successfully fabricate a well-grown β-Ga₂O₃ microrod array from GaOOH on a Si (100) substrate without other heterogeneous layers, to overcome the relatively large surface energy. Different hydrothermal conditions were used to investigate the growth mechanism of the β-Ga₂O₃/GaOOH microrod array on the silicon substrate. Most significantly, the key role of ethanol in the first-step hydrothermal solution is discussed in light of the change in the adsorption of growing nuclei at the solid–liquid interface.

中文翻译：

良好的生长的β-Ga ₂ ö ₃从GaOOH在Si（100）衬底和生长机理研究形成microrod阵列†

用一个简单的两步水热法成功地制造出生长良好的的β-Ga ₂ ö ₃从GaOOH microrod阵列上的硅而无需其它异质层（100）基板，克服了相对大的表面能。不同的水热条件用于研究的β-Ga的生长机理₂ ö ₃ / GaOOH microrod在硅衬底上排列。最重要的是，根据固液界面上生长核的吸附变化，讨论了乙醇在第一步热液中的关键作用。

更新日期：2018-06-30

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