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Enhanced Performance of Wideband Room Temperature Photodetector Based on Cd3As2 Thin Film/Pentacene Heterojunction
ACS Photonics ( IF 6.5 ) Pub Date : 2018-06-29 00:00:00 , DOI: 10.1021/acsphotonics.8b00727 Ming Yang 1 , Jun Wang 1, 2 , Jiayue Han 1 , Jiwei Ling 3 , Chunhui Ji 1 , Xiao Kong 1 , Xianchao Liu 1 , Zehua Huang 1 , Jun Gou 1 , Zhijun Liu 1, 2 , Faxian Xiu 3, 4 , Yadong Jiang 1, 2
ACS Photonics ( IF 6.5 ) Pub Date : 2018-06-29 00:00:00 , DOI: 10.1021/acsphotonics.8b00727 Ming Yang 1 , Jun Wang 1, 2 , Jiayue Han 1 , Jiwei Ling 3 , Chunhui Ji 1 , Xiao Kong 1 , Xianchao Liu 1 , Zehua Huang 1 , Jun Gou 1 , Zhijun Liu 1, 2 , Faxian Xiu 3, 4 , Yadong Jiang 1, 2
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3D Dirac semimetal Cd3As2, as an ideal candidate photosensitive material, has attracted widespread attention due to its excellent characteristics of high carrier mobility and zero band gap. Although photodetector based on Cd3As2 crystal material has been made, there are still huge significances for the utilization of Cd3As2 thin film in commercial devices. In this paper, we demonstrated a wide-band photodetector based on heterojunction of Cd3As2 thin film and pentacene for the first time. This photodetector can detect the radiation wavelength from 450 nm (visible region) to 10600 nm (long wave infrared region) at room temperature, exhibiting high current responsivity (36.15 mA/W) and external quantum efficiency (7.29%) at 650 nm, of which Ri is more than six times as high as previously reported that of crystalline Cd3As2 devices. Most interestingly, the far-infrared current responsivity of this detector at 10600 nm can reach 1.55 mA/W, which is extremely difficult for other 2D material detectors. Overall, the wide-wavelength photodetector based on the combined film using Cd3As2 and Pentacene is proved to possess superior performance for photodetector device application. Moreover, Cd3As2 thin film/pentacene heterojunction has an advantage in the manufacturing array devices, thus providing various possibilities for application of thin-film photodetector. The use of Cd3As2 thin film and organic molecules opens up a new path for the practical application of Cd3As2 materials.
中文翻译：
基于Cd 3 As 2薄膜/并五苯异质结的宽带室温光电探测器的增强性能
作为理想的候选光敏材料，3D Dirac半金属Cd 3 As 2由于其高载流子迁移率和零带隙的优异特性而引起了广泛的关注。尽管已经制造了基于Cd 3 As 2晶体材料的光电探测器，但是对于在商业设备中利用Cd 3 As 2薄膜仍然具有巨大的意义。在本文中，我们演示了基于Cd 3 As 2异质结的宽带光电探测器薄膜和并五苯。该光电探测器可在室温下检测从450 nm（可见光区域）到10600 nm（长波红外区域）的辐射波长，在650 nm波长下具有高电流响应（36.15 mA / W）和外部量子效率（7.29％）。这ř我超过6倍高以前报道，结晶镉3如图2的设备。最有趣的是，该探测器在10600 nm处的远红外电流响应率可以达到1.55 mA / W，这对于其他2D材料探测器而言极为困难。总体而言，基于使用Cd 3 As 2的复合膜的宽波长光电探测器并五苯被证明在光电探测器设备应用中具有优异的性能。此外，Cd 3 As 2薄膜/并五苯异质结在制造阵列器件中具有优势，因此为薄膜光电检测器的应用提供了各种可能性。Cd 3 As 2薄膜和有机分子的使用为Cd 3 As 2材料的实际应用开辟了一条新途径。
更新日期：2018-06-29
中文翻译：
基于Cd 3 As 2薄膜/并五苯异质结的宽带室温光电探测器的增强性能
作为理想的候选光敏材料，3D Dirac半金属Cd 3 As 2由于其高载流子迁移率和零带隙的优异特性而引起了广泛的关注。尽管已经制造了基于Cd 3 As 2晶体材料的光电探测器，但是对于在商业设备中利用Cd 3 As 2薄膜仍然具有巨大的意义。在本文中，我们演示了基于Cd 3 As 2异质结的宽带光电探测器薄膜和并五苯。该光电探测器可在室温下检测从450 nm（可见光区域）到10600 nm（长波红外区域）的辐射波长，在650 nm波长下具有高电流响应（36.15 mA / W）和外部量子效率（7.29％）。这ř我超过6倍高以前报道，结晶镉3如图2的设备。最有趣的是，该探测器在10600 nm处的远红外电流响应率可以达到1.55 mA / W，这对于其他2D材料探测器而言极为困难。总体而言，基于使用Cd 3 As 2的复合膜的宽波长光电探测器并五苯被证明在光电探测器设备应用中具有优异的性能。此外，Cd 3 As 2薄膜/并五苯异质结在制造阵列器件中具有优势，因此为薄膜光电检测器的应用提供了各种可能性。Cd 3 As 2薄膜和有机分子的使用为Cd 3 As 2材料的实际应用开辟了一条新途径。
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