Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions,Journal of Materials Chemistry C

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Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2018-06-28 00:00:00 , DOI: 10.1039/c8tc90116c
Shiqi Liu _{1,

2,

3,

4} , Jingzhen Li _{1,

2,

3,

4} , Bowen Shi _{1,

2,

3,

4} , Xiuying Zhang _{1,

2,

3,

4} , Yuanyuan Pan _{1,

2,

3,

4} , Meng Ye _{1,

2,

3,

4} , Ruge Quhe _{4,

5,

6,

7} , Yangyang Wang _{1,

2,

3,

4,

8} , Han Zhang _{1,

2,

3,

4} , Jiahuan Yan _{1,

2,

3,

4} , Linqiang Xu _{1,

2,

3,

4} , Ying Guo _{4,

9,

10,

11} , Feng Pan _{2,

4,

12,

13,

14} , Jing Lu _{1,

2,

3,

4,

15}

Affiliation

State Key Laboratory for Mesoscopic Physics and Department of Physics
Peking University
Beijing 100871
P. R. China
State Key Laboratory of Information Photonics and Optical Communications and School of Science
Beijing University of Posts and Telecommunications
Beijing 100876
Nanophotonics and Optoelectronics Research Center
School of Physics and Telecommunication Engineering
Shaanxi Sci-Tech University
Hanzhong 723001
School of Advanced Materials
Shenzhen Graduate School
Shenzhen 518055
Collaborative Innovation Center of Quantum Matter

Correction for ‘Gate-tunable interfacial properties of in-plane ML MX₂ 1T′–2H heterojunctions’ by Shiqi Liu et al., J. Mater. Chem. C, 2018, DOI: 10.1039/c8tc01106k.

中文翻译：