Abstract Sb-doped SnO2 thin films synthesized by sol-gel method were characterized physically and electrochemically. The crystallization was promoted by Sb incorporation in the lattice and the optical gap is blue-shifted due to the quantum confinement. The thermal variation of the electrical conductivity indicates a semiconducting behavior with relaxation process shifted to higher frequencies, typical of hopping mechanism of charge carriers. The hopping length R averages ~ 1.4 nm and the maximum barrier height (Wm) for the electronic jumps is 878 meV. The interfacial capacitance is characteristic of n-type behavior with an electrons density of 2.7 × 1019 cm−3 and a space charge region of 150 nm. The valence and conduction bands were found to be −0.89 and +2.95 VSCE respectively; they are pH sensitive and sweeping with respect to redox system. The impedance data revealed three distinct electrochemical behaviors with high diffusion process in doped samples marked by the increase of Warburg impedance (0.91–202.3 kΩ·cm2). The optimal band bending with respect to levels (H2O/H2, O2/H2O) • ‐ (O2/O2• −, OH•/H2O), was achieved with localized states mediating the charge exchange.

中文翻译：

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Sb掺杂对部分非晶Sb-SnO 2 薄膜传输和电化学性能的影响

摘要 对溶胶-凝胶法合成的Sb掺杂SnO2薄膜进行了物理和电化学表征。晶格中的 Sb 掺入促进了结晶，并且由于量子限制，光学间隙发生蓝移。电导率的热变化表明半导体行为具有转移到更高频率的弛豫过程，典型的电荷载流子跳跃机制。跳跃长度 R 平均约为 1.4 nm，电子跳跃的最大势垒高度 (Wm) 为 878 meV。界面电容是 n 型行为的特征，电子密度为 2.7 × 1019 cm-3，空间电荷区为 150 nm。发现价带和导带分别为 -0.89 和 +2.95 VSCE；它们对氧化还原系统具有 pH 敏感性和清除能力。阻抗数据揭示了掺杂样品中具有高扩散过程的三种不同的电化学行为，其特征是 Warburg 阻抗的增加 (0.91–202.3 kΩ·cm2)。相对于水平 (H2O/H2, O2/H2O) • - (O2/O2• -, OH•/H2O) 的最佳能带弯曲是通过介导电荷交换的局域态实现的。