Effects of CuO on constrained sintering of a polycrystalline TiO₂ ceramics have been investigated. The densification temperature of TiO₂ is reduced from 1100‐1200°C for pure TiO₂ to 900°C with the presence of 0.5‐3 mol% CuO under free sintering. For the samples with 1 mol% CuO, the constrained densification is slowed down, but a high sintered density of >95% at 950°C, which is close to that sintered freely, is still obtained. The above results are caused by the formation of CuO‐rich film at the grain boundaries, which reduces grain‐boundary energy and enhances grain‐boundary migration kinetics of TiO₂. To confirm the above findings, molecular dynamics simulation, at which the ratio of grain boundary energy of TiO₂ between with and without CuO agrees well with that obtained experimentally, is conducted.

中文翻译：

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CuO对多晶TiO2陶瓷约束烧结的影响

已经研究了CuO对多晶TiO ₂陶瓷的约束烧结的影响。在自由烧结条件下，存在0.5-3 mol％CuO的情况下，TiO ₂的致密化温度从纯TiO _2的1100-1200°C降至900°C。对于含1 mol％CuO的样品，受约束的致密化速度变慢，但仍获得了在950°C下> 95％的高烧结密度，接近于自由烧结的密度。上述结果是由于在晶界处形成了富CuO薄膜而导致的，这会降低晶界能量并增强TiO _2的晶界迁移动力学。为了证实上述发现，进行分子动力学模拟，得出TiO ₂的晶界能比 在有和没有CuO的情况下进行的实验与实验得到的结果非常吻合。