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Multi-Valley Superconductivity in Ion-Gated MoS2 Layers
Nano Letters ( IF 9.6 ) Pub Date : 2018-06-27 00:00:00 , DOI: 10.1021/acs.nanolett.8b01390 Erik Piatti 1 , Domenico De Fazio 2 , Dario Daghero 1 , Srinivasa Reddy Tamalampudi 2 , Duhee Yoon 2 , Andrea C. Ferrari 2 , Renato S. Gonnelli 1
Nano Letters ( IF 9.6 ) Pub Date : 2018-06-27 00:00:00 , DOI: 10.1021/acs.nanolett.8b01390 Erik Piatti 1 , Domenico De Fazio 2 , Dario Daghero 1 , Srinivasa Reddy Tamalampudi 2 , Duhee Yoon 2 , Andrea C. Ferrari 2 , Renato S. Gonnelli 1
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Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS2, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is often assumed that Cooper pairs reside only in the two electron pockets at the K/K′ points of the Brillouin Zone. However, experimental and theoretical results suggest that a multivalley Fermi surface (FS) is associated with the SC state, involving six electron pockets at Q/Q′. Here, we perform low-temperature transport measurements in ion-gated MoS2 flakes. We show that a fully multivalley FS is associated with the SC onset. The Q/Q′ valleys fill for doping ≳ 2 × 1013 cm–2, and the SC transition does not appear until the Fermi level crosses both spin–orbit split sub-bands Q 1 and Q 2. The SC state is associated with the FS connectivity and promoted by a Lifshitz transition due to the simultaneous population of multiple electron pockets. This FS topology will serve as a guideline in the quest for new superconductors.
中文翻译：
离子门控MoS 2层中的多谷超导性
过渡金属二硫化碳（TMD）层结合了与二维极限相关的增强效应，并通过电场对它们的相变进行了静电控制。几种半导体TMD（例如MoS 2）在被静电场掺杂时会在其表面形成超导电性（SC），但其机理尚有争议。通常认为库珀对仅驻留在布里渊区的K / K'点的两个电子腔中。然而，实验和理论结果表明，多谷费米表面（FS）与SC状态相关，在Q / Q'处涉及六个电子腔。在这里，我们在离子门控MoS 2中执行低温传输测量片状。我们表明，完全多谷FS与SC发作有关。Q / Q'谷填充了≳2×10 13 cm -2的掺杂，并且直到费米能级穿过自旋轨道分裂子带Q 1和Q 2时才出现SC跃迁 。SC状态与FS连通性相关联，并且由于同时存在多个电子腔，因此通过Lifshitz跃迁促进了SC状态。这种FS拓扑结构将作为寻求新超导体的指南。
更新日期：2018-06-27
中文翻译：
离子门控MoS 2层中的多谷超导性
过渡金属二硫化碳（TMD）层结合了与二维极限相关的增强效应，并通过电场对它们的相变进行了静电控制。几种半导体TMD（例如MoS 2）在被静电场掺杂时会在其表面形成超导电性（SC），但其机理尚有争议。通常认为库珀对仅驻留在布里渊区的K / K'点的两个电子腔中。然而，实验和理论结果表明，多谷费米表面（FS）与SC状态相关，在Q / Q'处涉及六个电子腔。在这里，我们在离子门控MoS 2中执行低温传输测量片状。我们表明，完全多谷FS与SC发作有关。Q / Q'谷填充了≳2×10 13 cm -2的掺杂，并且直到费米能级穿过自旋轨道分裂子带Q 1和Q 2时才出现SC跃迁 。SC状态与FS连通性相关联，并且由于同时存在多个电子腔，因此通过Lifshitz跃迁促进了SC状态。这种FS拓扑结构将作为寻求新超导体的指南。
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