Abstract Synthesis of nitrogen-doped graphene (NG) is of great importance and conventional synthesis methods still remain huge challenges due to uncontrollable nitrogen doping content and complicated experimental procedure. In this study, a promising approach for synthesis of high-quality NG via nitrogen ion implantation compatible with the current microelectronic industry is reported. By nitrogen ion implantation into a newly designed multilayered substrate (Ni/Cu/amorphous-SiC/SiO2/Si), high-quality NG can be directly grown on the metal surface after a one-step rapid thermal processing. A detailed growth model of NG based on the design of multilayered substrate, the low energy ion implantation and the formation of Cu-Ni alloy with composition gradient is established. The ion implantation approach could open up a new pathway for doping graphene, as well as shed light on versatile and potential applications of doping other 2D materials.

中文翻译：

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通过离子注入直接合成高质量的掺氮石墨烯

摘要 氮掺杂石墨烯（NG）的合成具有重要意义，但由于氮掺杂量的不可控和复杂的实验过程，传统的合成方法仍然面临巨大挑战。在这项研究中，报告了一种通过与当前微电子行业兼容的氮离子注入合成高质量 NG 的有前景的方法。通过将氮离子注入新设计的多层衬底（Ni/Cu/amorphous-SiC/SiO2/Si），经过一步快速热处理后，可以在金属表面直接生长高质量的 NG。基于多层衬底的设计、低能离子注入和成分梯度Cu-Ni合金的形成，建立了NG的详细生长模型。离子注入方法可以开辟一条掺杂石墨烯的新途径，