We investigated photocatalytic activity of γ-Ga₂O₃ nanocrystals with varying compositions. Substitutional doping with In³⁺ and Zn²⁺ allows for a control of charge carrier trapping in native defect states, which was studied by time-resolved photoluminescence spectroscopy. Doping nanocrystals with In³⁺ decreases while doping with Zn²⁺ increases the lifetime of the carriers trapped on donor and acceptor sites. The apparent rate constant for the photocatalytic dye degradation correlates well with the average donor-acceptor recombination lifetime, suggesting critical importance of carrier trapping for charge separation. The results of this work demonstrate the design of single-phase photocatalysts by controlling carrier trapping via compositional manipulation.

我们研究了光催化活性γ-Ga中_2层ö ₃具有不同组成的纳米晶体。In ³⁺和Zn ^2+的替代掺杂可以控制自然缺陷状态下的载流子俘获，已通过时间分辨光致发光光谱法对其进行了研究。In ³⁺掺杂的纳米晶体减少，而Zn ²⁺掺杂的纳米晶体减少延长了捕获在供体和受体位点上的载流子的寿命。光催化染料降解的表观速率常数与平均供体-受体复合寿命有很好的相关性，这表明载流子俘获对于电荷分离至关重要。这项工作的结果证明了通过组成操纵控制载流子捕获的单相光催化剂的设计。