Abstract We report on our attempt to perform the three-dimensional (3D) visualization of dislocation clusters in multicrystalline silicon (mc-Si) ingot by processing photoluminescence (PL) images and analysis of dislocation clusters in mc-Si. As-sliced wafers prepared using a high-performance (HP) mc-Si ingot were sequentially measured by PL imaging with intentional superposition of reflection. Then, various image processing techniques were applied to all the PL images to extract dark regions, which most likely correspond to dislocation clusters, as well as microstructures. By 3D reconstruction using a large quantity of 2D images, we could successfully visualize the generation, propagation and annihilation of dislocation clusters in HP mc-Si ingot. In addition, relationship between source region of dislocation clusters and crystal orientation were investigated by combining data scientific and experimental approaches. As a result, it was suggested that small angle grain boundaries with angular deviation of less than 10 degrees cause the generation of dislocation clusters.

中文翻译：

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基于数据科学的多晶硅锭位错簇的 3D 可视化与分析

摘要 我们报告了我们尝试通过处理光致发光 (PL) 图像和分析多晶硅 (mc-Si) 锭中位错簇的三维 (3D) 可视化和分析多晶硅 (mc-Si) 中的位错簇。使用高性能 (HP) mc-Si 锭制备的切片晶片通过具有有意叠加反射的 PL 成像顺序测量。然后，将各种图像处理技术应用于所有 PL 图像以提取最有可能对应于位错簇以及微结构的暗区。通过使用大量 2D 图像的 3D 重建，我们可以成功地可视化 HP mc-Si 锭中位错簇的生成、传播和湮灭。此外，结合数据科学和实验方法研究了位错簇源区与晶体取向的关系。结果表明，角度偏差小于 10 度的小角度晶界会导致位错簇的产生。