The outstanding performances of nanostructured all-inorganic CsPbX₃ (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photosensing performances of the CsPbI₃ nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl [1] benzothieno[3,2-b] [1] benzothiophene and CsPbI₃ nanorod layer was fabricated. The high-quality CsPbI₃ nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. The perovskite layer efficiently absorbs light, while the organic semiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photogating effect and field effect in the transistor, with a photoresponsivity as high as 4300 A W⁻¹, ultra-high photosensitivity of 2.2 × 10⁶, and excellent stability over 1 month. This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.

中文翻译：

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基于有机半导体和CsPbI 3钙钛矿纳米棒双层结构的混合场效应晶体管和光电探测器

纳米结构的全无机CsPbX ₃（X = I，Br，Cl）钙钛矿在光电应用中的出色表现可归因于它们具有合适的带隙，高吸收系数和长载流子寿命的独特组合，这是光电探测器所希望的。然而，CsPbI ₃纳米材料的光敏性能受到其低电荷传输效率的限制。在这项研究中，制造了具有2,7-二辛基[ 1 ]苯并噻吩并[3,2-b] [ 1 ]苯并噻吩和CsPbI ₃纳米棒层的有机半导体层的双层结构的光电晶体管。高质量的CsPbI ₃使用简单的浸涂方法获得的纳米棒层提供了混合晶体管器件的良好的晶体管性能。钙钛矿层有效地吸收光，而有机半导体层充当注入的光生载流子的传输通道并提供栅极调制。由于晶体管中的光门效应和场效应的协同作用，该混合型光电晶体管具有高性能，其光敏度高达4300 A W ^-1，超高光敏度为2.2×10 ⁶，并且在1个月内具有出色的稳定性。这项研究提供了一种在高性能光电探测器制造中结合钙钛矿纳米棒和有机半导体的优势的策略。