Quenching of Infrared-Active Optical Phonons in Nanolayers of Crystalline Materials by Graphene Surface Plasmons,ACS Photonics

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Quenching of Infrared-Active Optical Phonons in Nanolayers of Crystalline Materials by Graphene Surface Plasmons
ACS Photonics ( IF 6.5 ) Pub Date : 2018-06-25 00:00:00 , DOI: 10.1021/acsphotonics.8b00421
Peter Q. Liu _{1,

2} , John L. Reno ₁ , Igal Brener ₁

Affiliation

Optical phonons are fundamental excitations in many solid-state materials and have crucial influences on numerous material properties. Therefore, achieving extrinsic control of optical phonon properties, such as the phonon frequency, lifetime and population, may lead to new ways of tailoring various material properties relevant to key technological applications. Here, we experimentally demonstrate that infrared-active optical phonons in thin (tens of nm) layers of crystalline materials such as III–V semiconductors can be significantly quenched by a monolayer graphene. The optical phonon quenching effect is attributed to the ultrafast decay of optical phonons into resonant graphene surface plasmons at a rate which is significantly higher than the intrinsic decay rate of optical phonons due to lattice anharmonicity. Our results point to a new approach to engineering optical phonon properties and potentially other related material properties. Such an approach can be applied to a wide range of materials with infrared-active optical phonons.

中文翻译：

石墨烯表面等离激元对晶体材料纳米层中红外活性光学声子的猝灭

光学声子是许多固态材料中的基本激发，并且对许多材料的性能都具有至关重要的影响。因此，实现对光学声子特性（例如声子频率，寿命和粒子数）的外部控制，可能会导致采用新方法来定制与关键技术应用相关的各种材料特性。在这里，我们通过实验证明，薄层（数十纳米）的晶体材料（例如III–V半导体）中的红外活性光子可以被单层石墨烯显着淬灭。光学声子的猝灭效应归因于光学声子以快于共振频率的速率衰减到共振石墨烯表面等离子体激元，该速率显着高于由于晶格非谐性而引起的光学声子的固有衰减率。我们的结果指出了一种工程光学声子特性以及潜在的其他相关材料特性的新方法。这种方法可以应用于具有红外活性光子的多种材料。

更新日期：2018-06-25

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