Monolithic perovskite/silicon tandem solar cells show great promise for further efficiency enhancement for current silicon photovoltaic technology. In general, an interface (tunnelling or recombination) layer is usually required for electrical contact between the top and the bottom cells, which incurs higher fabrication costs and parasitic absorption. Most of the monolithic perovskite/Si tandem cells demonstrated use a hetero-junction silicon (Si) solar cell as the bottom cell, on small areas only. This work is the first to successfully integrate a low temperature processed (≤150 °C) planar CH₃NH₃PbI₃ perovskite solar cell on a homo-junction silicon solar cell to achieve a monolithic tandem without the use of an additional interface layer on large areas (4 and 16 cm²). Solution processed SnO₂ has been effective in providing dual functions in the monolithic tandem, serving as an ETL for the perovskite cell and as a recombination contact with the n-type silicon homo-junction solar cell that has a boron doped p-type (p++) front emitter. The SnO₂/p++ Si interface is characterised in this work and the dominant transport mechanism is simulated using Sentaurus technology computer-aided design (TCAD) modelling. The champion device on 4 cm² achieves a power conversion efficiency (PCE) of 21.0% under reverse-scanning with a V_OC of 1.68 V, a J_SC of 16.1 mA cm⁻² and a high FF of 78% yielding a steady-state efficiency of 20.5%. As our monolithic tandem device does not rely on the SnO₂ for lateral conduction, which is managed by the p++ emitter, up scaling to large areas becomes relatively straightforward. On a large area of 16 cm², a reverse scan PCE of 17.6% and a steady-state PCE of 17.1% are achieved. To our knowledge, these are the most efficient perovskite/homo-junction-silicon tandem solar cells that are larger than 1 cm². Most importantly, our results demonstrate for the first time that monolithic perovskite/silicon tandem solar cells can be achieved with excellent performance without the need for an additional interface layer. This work is relevant to the commercialisation of efficient large-area perovskite/homo-junction silicon tandem solar cells.

中文翻译：

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大面积高效无界面层的整体钙钛矿/均质结-硅串联太阳能电池，效率超过20％†

整体钙钛矿/硅串联太阳能电池显示出进一步提高当前硅光伏技术效率的巨大希望。通常，顶部和底部电池之间的电接触通常需要界面（隧道或复合）层，这会导致较高的制造成本和寄生吸收。展示的大多数整体钙钛矿/ Si串联电池仅在小面积上使用异质结硅（Si）太阳能电池作为底部电池。这项工作是成功整合低温处理（≤150°C）平面CH ₃ NH ₃ PbI _{3的第一项工作}均质结硅太阳能电池上的钙钛矿太阳能电池可实现整体串联，而无需在大面积（4和16 cm ²）上使用额外的界面层。固溶处理的SnO ₂可有效地在整体串联中提供双重功能，既可作为钙钛矿电池的ETL，又可与具有硼掺杂p型（p ++）的n型硅均质结太阳能电池复合接触）前发射器。SnO ₂ / p ++ Si接口在这项工作中得到了表征，并且使用Sentaurus技术计算机辅助设计（TCAD）建模来模拟主要的传输机制。在4 cm ²上的冠军设备在使用V的反向扫描下可实现21.0％的功率转换效率（PCE）_OC为1.68 V， J _SC为16.1 mA cm ^-2，高FF为78％，稳态效率为20.5％。由于我们的单片串联设备不依赖于SnO ₂进行横向传导，而是由p ++发射器进行管理，因此放大到大面积变得相对简单。在16 cm ²的大面积上，实现了17.6％的反向扫描PCE和17.1％的稳态PCE。据我们所知，这些是大于1 cm ²的最有效的钙钛矿/均质结-硅串联太阳能电池。最重要的是，我们的结果首次证明，无需额外的界面层即可以优异的性能获得整体式钙钛矿/硅串联太阳能电池。这项工作与有效的大面积钙钛矿/同质结硅串联太阳能电池的商业化有关。