Abstract We demonstrate a catalyst-free method to grow lateral InAs nanowires on GaAs (1 0 0) substrate by means of molecular beam epitaxy. By applying pre-surface treatment under oxygen plasma, lateral InAs nanowires with lengths of 1–2 μm and width of approximately 30–80 nm are epitaxial grown along [ 1 1 ¯ 0 ] direction. Stacking faults are not observed in the epitaxial process, which is usually an issue for InAs nanowires grown vertically on (1 1 1) substrates. Photo-luminescent measurements were performed for both single and multiple layers of InAs nanowires. A spectrum peak at the wavelength of 1625 nm is observed for a single wire at 5 K and room temperature emission is obtained for three layers of InAs nanowires. In addition, InAsSb nanowires are achieved along [1 1 0] direction, with a length of 0.4–0.8 μm and a width of 60–80 nm.

中文翻译：

---

横向 InAs 纳米线的无催化剂生长

摘要 我们展示了一种通过分子束外延在 GaAs (1 0 0) 衬底上生长横向 InAs 纳米线的无催化剂方法。通过在氧等离子体下进行表面预处理，长度为 1-2 μm，宽度约为 30-80 nm 的横向 InAs 纳米线沿 [ 1 1 ¯ 0 ] 方向外延生长。在外延工艺中未观察到堆垛层错，这通常是在 (1 1 1) 衬底上垂直生长的 InAs 纳米线的问题。对单层和多层 InAs 纳米线进行了光致发光测量。在 5 K 下观察到单根线在 1625 nm 波长处的光谱峰，并且对于三层 InAs 纳米线获得室温发射。此外，InAsSb 纳米线沿 [1 1 0] 方向实现，长度为 0.4-0.8 μm，宽度为 60-80 nm。