Abstract CdS/Si heterojunctions have been fabricated through depositing (0 0 2)-oriented grown CdS on the silicon by using a radio frequency (RF) magnetron sputtering. With increasing deposition times, CdS nanocrystallites are gradually growing. Through analyzing the current density vs voltage characterization, CdS/Si heterojunctions show the rectification effect. The onset voltages, series resistances and ideality factors are heightened with increasing deposition times. However, the reverse current densities are decreasing. For all obtained CdS/Si heterojunctions, the ideality factors are far greater than 1. It is indicated that there are a lot of defects in these heterojunctions. It is believed that through optimizing the fabrication conditions the devices based on CdS/Si heterojunctions will be promising application in the field of optoelectronic devices.

中文翻译：

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射频磁控溅射法制备(002)取向生长的CdS/Si异质结及其电学性能

摘要 使用射频（RF）磁控溅射在硅上沉积（0 0 2）取向生长的CdS，制备了CdS/Si异质结。随着沉积时间的增加，CdS 纳米微晶逐渐生长。通过分析电流密度与电压特性，CdS/Si 异质结显示出整流效应。起始电压、串联电阻和理想因子随着沉积时间的增加而升高。然而，反向电流密度正在降低。对于所有得到的CdS/Si异质结，理想因子都远大于1。这表明这些异质结存在很多缺陷。