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Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity
Advanced Science ( IF 14.3 ) Pub Date : 2018-06-21 , DOI: 10.1002/advs.201800478 Xing Zhou 1 , Xiaozong Hu 1 , Bao Jin 1 , Jing Yu 1 , Kailang Liu 1 , Huiqiao Li 1 , Tianyou Zhai 1
Advanced Science ( IF 14.3 ) Pub Date : 2018-06-21 , DOI: 10.1002/advs.201800478 Xing Zhou 1 , Xiaozong Hu 1 , Bao Jin 1 , Jing Yu 1 , Kailang Liu 1 , Huiqiao Li 1 , Tianyou Zhai 1
Affiliation
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2D GeSe possesses black phosphorous‐analog‐layered structure and shows excellent environmental stability, as well as highly anisotropic in‐plane properties. Additionally, its high absorption efficiency in the visible range and high charge carrier mobility render it promising for applications in optoelectronics. However, most reported GeSe‐based photodetectors show frustrating performance especially in photoresponsivity. Herein, a 2D GeSe‐based phototransistor with an ultrahigh photoresponsivity is demonstrated. Its optimized photoresponsivity can be up to ≈1.6 × 105 A W−1. This high responsivity can be attributed to the highly efficient light absorption and the enhanced photoconductive gain due to the existence of trap states. The exfoliated GeSe nanosheet is confirmed to be along the [001] (armchair direction) and [010] (zigzag direction) using transmission electron microscopy and anisotropic Raman characterizations. The angle‐dependent electric and photoresponsive performance is systematically explored. Notably, the GeSe‐based phototransistor shows strong polarization‐dependent photoresponse with a peak/valley ratio of 1.3. Furthermore, the charge carrier mobility along the armchair direction is measured to be 1.85 times larger than that along the zigzag direction.
中文翻译：
用于具有超高光响应性的光电晶体管的高度各向异性 GeSe 纳米片
二维GeSe具有黑磷类层状结构，表现出优异的环境稳定性以及高度各向异性的面内特性。此外，其在可见光范围内的高吸收效率和高载流子迁移率使其在光电子领域的应用前景广阔。然而，大多数报道的基于 GeSe 的光电探测器表现出令人沮丧的性能，尤其是在光响应性方面。本文展示了一种具有超高光响应性的二维 GeSe 光电晶体管。其优化的光响应度可达约1.6 × 10 5 AW -1 。这种高响应率可归因于高效的光吸收和由于陷阱态的存在而增强的光电导增益。使用透射电子显微镜和各向异性拉曼表征，证实剥离的 GeSe 纳米片沿着 [001]（扶手椅方向）和 [010]（之字形方向）。系统地探索了角度依赖的电响应和光响应性能。值得注意的是，基于 GeSe 的光电晶体管表现出强烈的偏振相关光响应，峰/谷比为 1.3。此外，沿扶手椅方向的载流子迁移率测得比沿之字形方向的载流子迁移率大1.85倍。
更新日期：2018-06-21
中文翻译：
用于具有超高光响应性的光电晶体管的高度各向异性 GeSe 纳米片
二维GeSe具有黑磷类层状结构，表现出优异的环境稳定性以及高度各向异性的面内特性。此外，其在可见光范围内的高吸收效率和高载流子迁移率使其在光电子领域的应用前景广阔。然而，大多数报道的基于 GeSe 的光电探测器表现出令人沮丧的性能，尤其是在光响应性方面。本文展示了一种具有超高光响应性的二维 GeSe 光电晶体管。其优化的光响应度可达约1.6 × 10 5 AW -1 。这种高响应率可归因于高效的光吸收和由于陷阱态的存在而增强的光电导增益。使用透射电子显微镜和各向异性拉曼表征，证实剥离的 GeSe 纳米片沿着 [001]（扶手椅方向）和 [010]（之字形方向）。系统地探索了角度依赖的电响应和光响应性能。值得注意的是，基于 GeSe 的光电晶体管表现出强烈的偏振相关光响应，峰/谷比为 1.3。此外，沿扶手椅方向的载流子迁移率测得比沿之字形方向的载流子迁移率大1.85倍。
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