A new thieno[3,2-b]thiophene-incorporated acceptor TTC has been developed. The TTC acceptor was installed in a haptacyclic ladder-type core (BDCPDT) to furnish an n-type BDCPDT-TTC. The standard PBDB-T:BDCPDT-IC device showed a PCE of 9.33% with a V_oc of 0.86 V and a J_sc of 16.56 mA/cm². By molecular engineering of the acceptor unit, the BDCPDT-TTC:PBDB-T-based device delivered an enhanced efficiency of 10.29% with a simultaneously enhanced V_oc of 0.94 V and J_sc of 17.72 mA/cm². Incorporation of the electron-donating thieno[3,2-b]thiophene unit into the acceptor moiety decreases the electron-accepting strength, thereby upshifting the HOMO/LUMO energy levels to decrease the ΔE_HOMO and E_loss, achieving a larger V_oc. Second, the extended conjugated bicyclic thieno[3,2-b]thiophene ring beneficially induces an additional optical transition at short wavelengths, leading to improvement of J_sc. Alternatively, BDCPDT-FIC installed with the fluorinated acceptor shows more red-shifted absorption to achieve a high J_sc of 19.12 mA/cm².

中文翻译：

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新的基于噻吩并[3,2 - b ]噻吩的受体：调节梯形N型材料的受体强度，以同时实现增强的非富勒烯太阳能电池的V _oc和J _sc

已经开发了新的并入噻吩并[3，2 - b ]噻吩的受体TTC。将TTC受体安装在四环阶梯型核（BDCPDT）中，以提供n型BDCPDT-TTC。标准PBDB-T：BDCPDT-IC器件的PCE为9.33％，V _oc为0.86 V，J _sc为16.56 mA / cm ²。通过受体单元的分子工程，基于BDCPDT-TTC：PBDB-T的设备提供了10.29％的增强效率，同时V _oc为0.94 V，J _sc为17.72 mA / cm ²。结合电子给体硫杂诺[3,2- b]噻吩单元进入受体部分会降低电子接受强度，从而使HOMO / LUMO能级上移，从而降低ΔE _HOMO和E_损失，从而获得更大的V _oc。第二，延伸的共轭双环噻吩并[3，2- b ]噻吩环在短波长处有益地诱导了额外的光学跃迁，从而导致了J _sc的改善。或者，安装了氟化受体的BDCPDT-FIC表现出更多的红移吸收，可实现19.12 mA / cm ²的高J _sc。