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Bismuth oxysulfide film electrodes with giant incident photon-to-current conversion efficiency: the dynamics of properties with deposition time
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2018-06-22 00:00:00 , DOI: 10.1039/c8cp03225d Evgeny A. Bondarenko 1, 2, 3 , Eugene A. Streltsov 1, 2, 3 , Alexander V. Mazanik 1, 2, 3 , Anatoly I. Kulak 3, 4, 5, 6 , Vytautas Grivickas 7, 8, 9, 10 , Patrik Ščajev 7, 8, 9, 10 , Ekaterina V. Skorb 11, 12, 13, 14
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2018-06-22 00:00:00 , DOI: 10.1039/c8cp03225d Evgeny A. Bondarenko 1, 2, 3 , Eugene A. Streltsov 1, 2, 3 , Alexander V. Mazanik 1, 2, 3 , Anatoly I. Kulak 3, 4, 5, 6 , Vytautas Grivickas 7, 8, 9, 10 , Patrik Ščajev 7, 8, 9, 10 , Ekaterina V. Skorb 11, 12, 13, 14
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It was demonstrated in our previous work that the photoelectrochemical (PEC) reduction processes occur with a giant incident photon-to-current conversion efficiency (IPCE ≫ 100%) at bismuth oxysulfide (BOS) semiconductor films in aqueous solutions containing acceptors of photoelectrons ([Fe(CN)6]3−). The anomalously high IPCE was related to the photoconductivity of the semiconductor. In this work, we analyze the dynamics of the chemical and phase composition of BOS films with variation of their deposition time, as well as the dependence of photocurrent on the film thickness and wavelength of the incident light. We demonstrate that in the case of illumination with a short-wavelength light (λ = 465 nm), the photocurrent is reduced down to a complete disappearance with an increase in the film thickness in the range of 0.3–1.3 μm, and for a fixed thickness of the bismuth oxysulfide film, the photocurrent decreases with the reduction of the wavelength indicating that photogeneration of the charge carriers over the entire thickness of the film is necessary for the giant IPCE effect. Using the light induced transient grating (LITG) method, the lifetime of the charge carriers (τ) was determined in the range of 25–80 ps depending on the film thickness, whereas the diffusion coefficient (D) does not exceed 1 cm2 s−1 meaning that the charge transport across the films is determined only by drift.
中文翻译：
入射光子-电流转换效率极高的氧硫化铋薄膜电极：随沉积时间变化的动力学
在我们以前的工作中证明，在含有光电子受体的水溶液中，在氧硫化铋（BOS）半导体膜上发生光电化学（PEC）还原过程的入射光子-电流转换效率很高（IPCE≫ 100％）。 Fe（CN）6 ] 3−）。异常高的IPCE与半导体的光电导性有关。在这项工作中，我们分析了BOS膜的化学和相组成的动力学及其沉积时间的变化，以及光电流对膜厚度和入射光波长的依赖性。我们证明了在短波长光（λ= 465 nm），随着膜厚度在0.3–1.3μm范围内的增加，光电流被减小到完全消失，对于固定厚度的氧化铋铋膜，光电流随着波长的减小而减小这表明，要实现巨大的IPCE效应，必须在薄膜的整个厚度上光生载流子。使用光感应瞬变光栅（LITG）方法，根据薄膜厚度，电荷载流子（τ）的寿命确定在25-80 ps的范围内，而扩散系数（D）不超过1 cm 2 s -1表示穿过薄膜的电荷传输仅由漂移决定。
更新日期：2018-06-22
中文翻译：
入射光子-电流转换效率极高的氧硫化铋薄膜电极：随沉积时间变化的动力学
在我们以前的工作中证明，在含有光电子受体的水溶液中，在氧硫化铋（BOS）半导体膜上发生光电化学（PEC）还原过程的入射光子-电流转换效率很高（IPCE≫ 100％）。 Fe（CN）6 ] 3−）。异常高的IPCE与半导体的光电导性有关。在这项工作中，我们分析了BOS膜的化学和相组成的动力学及其沉积时间的变化，以及光电流对膜厚度和入射光波长的依赖性。我们证明了在短波长光（λ= 465 nm），随着膜厚度在0.3–1.3μm范围内的增加，光电流被减小到完全消失，对于固定厚度的氧化铋铋膜，光电流随着波长的减小而减小这表明，要实现巨大的IPCE效应，必须在薄膜的整个厚度上光生载流子。使用光感应瞬变光栅（LITG）方法，根据薄膜厚度，电荷载流子（τ）的寿命确定在25-80 ps的范围内，而扩散系数（D）不超过1 cm 2 s -1表示穿过薄膜的电荷传输仅由漂移决定。
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