Inorganic perovskite [KNbO₃]_0.9[BaNi_0.5Nb_0.5O_3‐σ]_0.1 (KBNNO) ferroelectric thin films with narrow band gap (1.83 eV) and high room‐temperature remnant polarization (Pr = 0.54 μC/cm²) was grown successfully on the Pt(111)/Ti/SiO₂/Si(100) substrates by pulsed laser deposition. Ferroelectric solar cells with a basic structure of ITO/KBNNO/Pt were further prepared based on these thin films, which exhibited obvious external‐poling dependent photovoltaic effects. When the devices were negatively poled, the short‐circuit current and open‐circuit voltage were both significantly higher than those of the devices poled positively. This is attributed to enhanced charge separation under the depolarization field induced by the negative poling, which is superimposed with the built‐in field induced by the Schottky barriers at the interfaces between KBNNO and the two electrodes. When a poling voltage of ‐1 V was applied, the device showed a short‐circuit current as high as 27.3 μA/cm², which was by two orders of magnitude larger than that of the KBNNO thick‐film (20 μm) devices reported previously. This work may inspire further exploration for lead‐free inorganic perovskite ferroelectric photovoltaic devices.

中文翻译：

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无机钙钛矿[KNbO3] 0.9 [BaNi0.5Nb0.5O3-σ] 0.1铁电薄膜太阳能电池中的光电流大大提高

生长了具有窄带隙（1.83 eV）和高室温残余极化（Pr = 0.54μC/ cm ²）的无机钙钛矿[KNbO ₃ ] _0.9 [BaNi _0.5 Nb _0.5 O3 _-σ ] _0.1（KBNNO）铁电薄膜成功地在Pt（111）/ Ti / SiO _2上/ Si（100）基板通过脉冲激光沉积。在这些薄膜的基础上，进一步制备了具有ITO / KBNNO / Pt基本结构的铁电太阳能电池，这些电池表现出明显的与外部极化有关的光伏效应。当器件为负极时，短路电流和开路电压均明显高于正极。这归因于在负极化引起的去极化场下增强的电荷分离，该电荷分离与KBNNO和两个电极之间界面处的肖特基势垒引起的内建场叠加。当施加-1 V的极化电压时，该器件显示出高达27.3μA/ cm ²的短路电流，它比以前报道的KBNNO厚膜（20μm）器件大两个数量级。这项工作可能会激发对无铅无机钙钛矿铁电光伏器件的进一步探索。