当前位置：
X-MOL 学术
›
ACS Photonics
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Limiting Optical Diodes Enabled by the Phase Transition of Vanadium Dioxide
ACS Photonics ( IF 6.5 ) Pub Date : 2018-06-20 00:00:00 , DOI: 10.1021/acsphotonics.8b00313 Chenghao Wan , Erik H. Horak , Jonathan King 1 , Jad Salman , Zhen Zhang 2 , You Zhou 3 , Patrick Roney , Bradley Gundlach , Shriram Ramanathan 2 , Randall H. Goldsmith , Mikhail A. Kats
ACS Photonics ( IF 6.5 ) Pub Date : 2018-06-20 00:00:00 , DOI: 10.1021/acsphotonics.8b00313 Chenghao Wan , Erik H. Horak , Jonathan King 1 , Jad Salman , Zhen Zhang 2 , You Zhou 3 , Patrick Roney , Bradley Gundlach , Shriram Ramanathan 2 , Randall H. Goldsmith , Mikhail A. Kats
Affiliation
|
A limiting optical diode is an asymmetric nonlinear device that is bidirectionally transparent at low power but becomes opaque when illuminated by sufficiently intense light incident from a particular direction. We explore the use of a phase-transition material, vanadium dioxide (VO2), as an active element of limiting optical diodes. The VO2 phase transition can be triggered by optical absorption, resulting in a change in refractive index orders of magnitude larger than what can be achieved with conventional nonlinearities. As a result, a limiting optical diode based on incident-direction-dependent absorption in a VO2 layer can be very thin, and can function at low powers without field enhancement, resulting in broadband operation. We demonstrate a simple thin-film limiting optical diode comprising a transparent substrate, a VO2 film, and a semitransparent metallic layer. For sufficiently high incident intensity, our proof-of-concept device realizes broadband asymmetric transmission across the near-infrared, and is approximately ten times thinner than the free-space wavelength.
中文翻译：
限制由二氧化钒的相变引起的光电二极管
限位光学二极管是一种非对称非线性器件，在低功率下双向透明，但在从特定方向入射的足够强的光照射下变得不透明。我们探索使用相变材料二氧化钒（VO 2）作为限制光电二极管的有源元件。VO 2相变可以通过光吸收来触发，从而导致折射率变化的数量级大于常规非线性所能实现的变化。结果，基于VO 2中与入射方向相关的吸收的极限光电二极管该层可以非常薄，并且可以在不增强场的情况下以低功率工作，从而导致宽带操作。我们演示了一个简单的薄膜限制光电二极管，该二极管包括透明基板，VO 2膜和半透明金属层。为了获得足够高的入射强度，我们的概念验证设备可实现近红外范围内的宽带非对称传输，并且比自由空间波长薄约十倍。
更新日期：2018-06-20
中文翻译：
限制由二氧化钒的相变引起的光电二极管
限位光学二极管是一种非对称非线性器件，在低功率下双向透明，但在从特定方向入射的足够强的光照射下变得不透明。我们探索使用相变材料二氧化钒（VO 2）作为限制光电二极管的有源元件。VO 2相变可以通过光吸收来触发，从而导致折射率变化的数量级大于常规非线性所能实现的变化。结果，基于VO 2中与入射方向相关的吸收的极限光电二极管该层可以非常薄，并且可以在不增强场的情况下以低功率工作，从而导致宽带操作。我们演示了一个简单的薄膜限制光电二极管，该二极管包括透明基板，VO 2膜和半透明金属层。为了获得足够高的入射强度，我们的概念验证设备可实现近红外范围内的宽带非对称传输，并且比自由空间波长薄约十倍。
京公网安备 11010802027423号