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Broadband sensitization of lanthanide emission with indium phosphide quantum dots for visible to NIR downshifting
Journal of the American Chemical Society ( IF 15.0 ) Pub Date : 2018-06-20 , DOI: 10.1021/jacs.8b02612
Joseph K. Swabeck 1, 2 , Stefan Fischer 1, 2 , Noah D. Bronstein 1, 2 , A. Paul Alivisatos 1, 2, 3, 4
Affiliation  

Semiconductor quantum dot (QD)-sensitized lanthanide ions hold great promise in producing a broadly absorbing and sharply emitting luminophore, but their synthesis has proven to be difficult. We report the first synthesis of core/shell/shell InP/Ln xY1- xF3/ShF3 (Ln = Yb, Nd; Sh = Lu, Y) nanocrystals that exhibit a broad visible absorption coupled to a sharp near-infrared emission. Additionally, this is the first report of Nd being coupled to a QD absorber. We characterize the system with a variety of electron microscopy and X-ray techniques that prove this unique structure. Optical measurements confirm the correlation of the Ln3+ emission to the QD absorption, while the presence of a trap-state emission gives a clue as to the mechanism of energy transfer between the dot and the lanthanide.

中文翻译:

用磷化铟量子点对镧系元素发射进行宽带敏化,以实现可见光到 NIR 降频

半导体量子点 (QD) 敏化镧系元素离子在产生广泛吸收和快速发射的发光体方面具有很大的希望,但已证明它们的合成很困难。我们报告了核/壳/壳 InP/Ln xY1-xF3/ShF3 (Ln = Yb, Nd; Sh = Lu, Y) 纳米晶体的首次合成,该纳米晶体表现出广泛的可见光吸收与尖锐的近红外发射耦合。此外,这是 Nd 与 QD 吸收体耦合的第一份报告。我们使用各种电子显微镜和 X 射线技术来表征该系统,以证明这种独特的结构。光学测量证实了 Ln3+ 发射与 QD 吸收的相关性,而陷阱态发射的存在为点和镧系元素之间的能量转移机制提供了线索。
更新日期:2018-06-20
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