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Field annealing effect on magnetostriction and sensitivity of the ferromagnetic Fe 60 Co 18 Ga 22 /Si(100) film
Journal of Magnetism and Magnetic Materials ( IF 2.5 ) Pub Date : 2018-11-01 , DOI: 10.1016/j.jmmm.2018.05.092
S.U. Jen , Y.C. Chen

Abstract As-deposit (AD) and field-anneal (FA) Fe 60 Co 18 Ga 22 films have been made. We found that after FA treatment, both the macro-stress and saturation magnetostriction in the film increase greatly. Also, after FA treatment, the tetragonal L1 2 phase shows up, and coexists within the original two-phase (A2 + D0 3 ) field. In agreement with the theory, the occurrence of large stress and magnetostriction is related to the magnetic-field-induced flip of the tetragonal axis of the L1 2 phase crystal by FA. As a low-field sensor, FA could enhance the sensitivity of the Fe 60 Co 18 Ga 22 film element up to 18.9 ppm/Oe.

中文翻译:

场退火对铁磁 Fe 60 Co 18 Ga 22 /Si(100) 薄膜磁致伸缩和灵敏度的影响

摘要 已经制备了沉积 (AD) 和场退火 (FA) Fe 60 Co 18 Ga 22 薄膜。我们发现经过 FA 处理后,薄膜中的宏观应力和饱和磁致伸缩都大大增加。此外,FA处理后,四方L1 2 相出现,并在原始两相(A2 + D0 3 )场内共存。与理论一致,大应力和磁致伸缩的发生与磁场诱导的L1 2 相晶体四方轴翻转有关。作为一种低场传感器,FA 可以将 Fe 60 Co 18 Ga 22 薄膜元件的灵敏度提高到 18.9 ppm/Oe。
更新日期:2018-11-01
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