Phosphinecarboxamide as an unexpected phosphorus precursor in the chemical vapour deposition of zinc phosphide thin films†,Dalton Transactions

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Phosphinecarboxamide as an unexpected phosphorus precursor in the chemical vapour deposition of zinc phosphide thin films†
Dalton Transactions ( IF 3.5 ) Pub Date : 2018-06-20 00:00:00 , DOI: 10.1039/c8dt00544c
Samuel V. F. Beddoe _{1,

2,

3,

4} , Samuel D. Cosham _{1,

2,

3,

4} , Alexander N. Kulak _{4,

5,

6,

7} , Andrew R. Jupp _{1,

4,

8,

9,

10} , Jose M. Goicoechea _{1,

4,

8,

9,

10} , Geoffrey Hyett _{1,

2,

3,

4}

Affiliation

This paper demonstrates the use of phosphinecarboxamide as a facile phosphorus precursor, which can be used alongside zinc acetate for the chemical vapour deposition (CVD) of adherent and crystalline zinc phosphide films. Thin films of Zn₃P₂ have a number of potential applications and phosphinecarboxamide is a safer and more efficient precursor than the highly toxic, corrosive and flammable phosphine used in previous CVD syntheses.

中文翻译：

膦羧甲酰胺是磷化锌薄膜化学气相沉积中出乎意料的磷前体†

本文证明了膦甲酰胺作为一种简便的磷前体的用途，该磷前体可与乙酸锌一起用于粘附和结晶磷化锌膜的化学气相沉积（CVD）。Zn ₃ P ₂薄膜具有许多潜在的应用，并且膦羧酰胺是一种比以前的CVD合成中使用的剧毒，腐蚀性和易燃的膦更安全，更有效的前体。

更新日期：2018-06-20

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