Abstract N-type 4H-SiC crystals were grown by the physical vapor transport (PVT) method with nitrogen and aluminum (N–Al) co-doping. By using aluminum carbide powder preannealed in nitrogen gas atmosphere as an aluminum doping source, we obtained highly N–Al co-doped crystals with a nitrogen concentration higher than that in nitrogen-only-doped crystals. The dislocation densities of N-Al co-doped crystals with a high aluminum concentration (>1 × 1019 cm−3) were found to become higher than those with a low aluminum concentration (

中文翻译：

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物理气相传输法生长的氮铝共掺杂 N 型 4H-SiC 的晶体生长和评价

摘要 通过氮和铝 (N-Al) 共掺杂的物理气相传输 (PVT) 方法生长了 N 型 4H-SiC 晶体。通过使用在氮气气氛中预退火的碳化铝粉末作为铝掺杂源，我们获得了氮浓度高于纯氮掺杂晶体的高 N-Al 共掺杂晶体。发现具有高铝浓度（> 1 × 1019 cm-3）的 N-Al 共掺杂晶体的位错密度变得高于具有低铝浓度的晶体（