Abstract Single crystals of a high temperature superconductor Bi2Sr2CaCu2O8+x (2212) were grown using two different techniques, namely, regrowth technique as well as a pressure technique and the results are compared. Single crystal X-ray diffraction (XRD) performed on crystals grown using both techniques show no impurity or intergrowth phase. However, powder XRD reveals the presence of only Bi2Sr2CuO6+x(2201) intergrowth phase in crystals grown using pressure technique, with additional impurity phases also found in the crystals grown using regrowth technique. Rietveld refinement showed the weight fraction of 2212 as 93 % in crystals grown from pressure technique, confirming the excellent quality of the as-grown crystals. The transition temperature of crystals grown using both techniques was ∼ 90 K. It was found that pressure technique gives crystals that have a higher superconducting volume fraction ( ∼ 100) than that of crystals grown using regrowth technique. Structural and magnetization measurements reveal that the as-grown crystals grown using pressure technique are of high quality, comparable to those grown using traveling solvent floating zone technique. Crystals grown by both the techniques exhibit second magnetization peak anomaly.

中文翻译：

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通过简单压力技术生长的 Bi 2 Sr 2 CaCu 2 O 8+x 晶体的生长和物理性质以及与再生长自熔技术的比较

摘要 高温超导体 Bi2Sr2CaCu2O8+x (2212) 的单晶使用两种不同的技术生长，即再生长技术和压力技术，并比较了结果。对使用这两种技术生长的晶体进行的单晶 X 射线衍射 (XRD) 显示没有杂质或共生相。然而，粉末 XRD 显示在使用压力技术生长的晶体中仅存在 Bi2Sr2CuO6+x(2201) 共生相，在使用再生长技术生长的晶体中也发现了额外的杂质相。Rietveld 精修显示 2212 的重量分数在通过压力技术生长的晶体中为 93%，证实了生长晶体的优良品质。使用这两种技术生长的晶体的转变温度约为 90 K。发现压力技术产生的晶体具有比使用再生长技术生长的晶体更高的超导体积分数 (~ 100)。结构和磁化测量表明，使用压力技术生长的晶体具有高质量，可与使用流动溶剂浮区技术生长的晶体相媲美。通过这两种技术生长的晶体表现出第二个磁化峰异常。