The decomposition of tetramethoxysilane (Si(OCH₃)₄, TMOS) was studied in shock-tube experiments in the 1131–1610 K temperature range at pressures ranging from 1.9 to 2.3 bar behind reflected shock waves combining gas chromatography/mass spectrometry (GC/MS) and high-repetition-rate time-of-flight mass spectrometry (HRR-TOF-MS). The initial reaction is a four-center elimination to form methanol. At elevated temperatures, TMOS also decomposes via a O–C bond scission forming a methyl (CH₃) and the corresponding OSi(OCH₃)₃ radical. The main observed products were methane (CH₄), methanol (CH₃OH), ethylene (C₂H₄), and ethane (C₂H₆). The yields of these products increase with temperature. A kinetics mechanism from literature (Chu et al. 1995), which quantitatively accounts for the observed products in the decomposition of TMOS, was adopted and updated. The mechanism contains 13 silicon species and 24 reactions with silicon-containing species. It was combined with the methanol mechanism of Burke et al. (2006). The measured global rate constant for TMOS decomposition was found to be k_overall[TMOS→products] = 2.9 × 10¹¹exp(− 225 kJ mol⁻¹/RT)s⁻¹.

结合气相色谱/质谱（GC / GC / GC / GC / GC / MS）在1131–1610 K温度范围内，在压力范围为1.9至2.3 bar的压力下，在冲击管实验中研究了四甲氧基硅烷（Si（OCH ₃）₄，TMOS）的分解。MS）和高重复率飞行时间质谱（HRR-TOF-MS）。最初的反应是四中心消除反应，形成甲醇。在升高的温度下，TMOS还会通过O-C键断裂而分解，形成一个甲基（CH ₃）和相应的OSi（OCH ₃）₃自由基。观察到的主要产物是甲烷（CH ₄），甲醇（CH ₃ OH），乙烯（C ₂ H ₄）和乙烷（C ₂ H ₆）。这些产物的产率随温度增加。采用并更新了文献中的动力学机制（Chu等， 1995），该机制定量地解释了在TMOS分解中观察到的产物。该机制包含13种硅物质和24种与含硅物质的反应。它与Burke等人的甲醇机理相结合。（2006）。发现用于TMOS分解的测得的整体速率常数_总体为k [ TMOS →产物] = 2.9×10 ¹¹ exp（-225 kJ mol ^-1 / RT）s ^-1。