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Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-06-20 00:00:00 , DOI: 10.1021/acs.chemmater.8b02030 Haijie Chen 1, 2 , Helmut Claus 1 , Jin-Ke Bao 1 , Constantinos C. Stoumpos 2 , Duck Young Chung 1 , Wai-Kwong Kwok 1 , Mercouri G. Kanatzidis 1, 2
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-06-20 00:00:00 , DOI: 10.1021/acs.chemmater.8b02030 Haijie Chen 1, 2 , Helmut Claus 1 , Jin-Ke Bao 1 , Constantinos C. Stoumpos 2 , Duck Young Chung 1 , Wai-Kwong Kwok 1 , Mercouri G. Kanatzidis 1, 2
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The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.
中文翻译：
窄间隙半导体CsBi 4 Te 6的Na和K掺杂的超导电性和结构转换
单斜晶的窄间隙（〜0.08 eV）半导体CsBi 4 Te 6是一种独特的分层系统，可以对其进行掺杂以实现高热电性能和超导性。在这里，我们报告了通过将CsBi 4 Te 6单晶与Na和K合金化而引起的超导性和结构变化。掺杂水平≥0.39的CsBi 4 Te 6中的Na替代和≥0.63的K中的Na替代会转变原始的单斜晶结构（p型）为正交晶体的RbBi 3.67 Te 6型结构（n型）。当K水平≤0.18时，CsBi 4 Te 6的单斜结构类型被保留。在所有合成的掺杂单晶上的传输和磁测量表明，II型体超导性。在Cs 0.82 K 0.18 Bi 4 Te 6中获得了最大的超导转变温度5.07 K，这是铋硫族化物基超导体中的最高温度，其最高临界场约为15T。在窄带隙半导体中进行适当的掺杂。
更新日期：2018-06-20
中文翻译：
窄间隙半导体CsBi 4 Te 6的Na和K掺杂的超导电性和结构转换
单斜晶的窄间隙（〜0.08 eV）半导体CsBi 4 Te 6是一种独特的分层系统，可以对其进行掺杂以实现高热电性能和超导性。在这里，我们报告了通过将CsBi 4 Te 6单晶与Na和K合金化而引起的超导性和结构变化。掺杂水平≥0.39的CsBi 4 Te 6中的Na替代和≥0.63的K中的Na替代会转变原始的单斜晶结构（p型）为正交晶体的RbBi 3.67 Te 6型结构（n型）。当K水平≤0.18时，CsBi 4 Te 6的单斜结构类型被保留。在所有合成的掺杂单晶上的传输和磁测量表明，II型体超导性。在Cs 0.82 K 0.18 Bi 4 Te 6中获得了最大的超导转变温度5.07 K，这是铋硫族化物基超导体中的最高温度，其最高临界场约为15T。在窄带隙半导体中进行适当的掺杂。
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