Efficiency increased to 15.2% for ultra‐thin Cu(In,Ga)Se2 solar cells,Progress in Photovoltaics

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Efficiency increased to 15.2% for ultra‐thin Cu(In,Ga)Se2 solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-06-19 , DOI: 10.1002/pip.3033
Lorelle M. Mansfield ₁ , Ana Kanevce ₁ , Steven P. Harvey ₁ , Karen Bowers ₁ , Carolyn Beall ₁ , Stephen Glynn ₁ , Ingrid L. Repins ₁

Affiliation

We improved the efficiency of ultra‐thin (0.49‐μm‐thick) Cu(In,Ga)Se₂ solar cells to 15.2% (officially measured). To achieve these results, we modified growth conditions from the 3‐stage process but did not add post‐deposition treatments or additional material layers. The increase in device efficiency is attributed to a steeper Ga gradient in the CIGS with higher Ga content near the Mo back contact, which can hinder electron‐hole recombination at the interface. We discuss device measurements and film characterization for ultra‐thin CIGS. Modeling is presented that shows the route to even higher efficiencies for devices with CIGS thicknesses of 0.5 μm.

中文翻译：

超薄Cu（In，Ga）Se2太阳能电池的效率提高到15.2％

我们将超薄（0.49μm厚）Cu（In，Ga）Se ₂太阳能电池的效率提高到15.2％（官方测量）。为了获得这些结果，我们修改了三阶段工艺的生长条件，但未添加沉积后处理或其他材料层。器件效率的提高归因于CIGS中的Ga梯度较陡，且Mo背触点附近的Ga含量较高，这可能会阻碍界面处的电子-空穴复合。我们讨论了超薄CIGS的设备测量和膜表征。提出的建模显示了CIGS厚度为0.5μm的器件实现更高效率的途径。

更新日期：2018-06-19

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