Novel back contact reflector for high efficiency and double‐graded Cu(In,Ga)Se2 thin‐film solar cells,Progress in Photovoltaics

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Novel back contact reflector for high efficiency and double‐graded Cu(In,Ga)Se2 thin‐film solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-06-19 , DOI: 10.1002/pip.3029
Benjamin Bissig ₁ , Romain Carron ₁ , Lukas Greuter ₁ , Shiro Nishiwaki ₁ , Enrico Avancini ₁ , Christian Andres ₁ , Thomas Feurer ₁ , Stephan Buecheler ₁ , Ayodhya N. Tiwari ₁

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For highest efficiency Cu(In,Ga)Se₂ thin‐film solar cells, the V‐shaped bandgap grading can result in residual transmission through the absorber layer and parasitic absorbance in the Mo back contact. To improve the back contact reflectance, absorbers were grown in a multistage process on Mo/Al/InZnO substrates. Additionally, ultrathin layers of Mo and MoSe_X were introduced at the InZnO‐absorber interface. Effects of the different back contacts on device performance, absorber morphology, and composition are characterized and discussed. Finally, a numerical model is proposed to understand the experimentally observed increase in device current density of 0.3 to 0.8 mAcm⁻².

中文翻译：

新型背面接触反射器，用于高效和双梯度Cu（In，Ga）Se2薄膜太阳能电池

对于效率最高的Cu（In，Ga）Se ₂薄膜太阳能电池，V型带隙渐变会导致残留的透过吸收层传输和Mo背接触中的寄生吸收。为了提高背接触反射率，吸收剂在Mo / Al / InZnO衬底上以多阶段工艺生长。此外，在InZnO-吸收体界面引入了Mo和MoSe _X的超薄层。表征并讨论了不同背接触对器件性能，吸收体形态和组成的影响。最后，提出了一个数值模型来理解实验观察到的器件电流密度从0.3到0.8 mAcm ^-2的增加。

更新日期：2018-06-19

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