The impact of air‐light exposure of bare Cu(In,Ga)Se₂ layers is investigated by measuring the performance of completed solar cells. Solar cells formed from air‐light–exposed absorbers reveal inferior cell parameters by about 10% regarding open circuit voltage, fill factor, and efficiency compared with cells from nonilluminated absorbers. Time‐dependent and temperature‐dependent open circuit voltage measurements give reasons that the solar cell impairment by air‐light exposure of the bare absorbers is due to interface recombination. Interface states are detected by admittance spectroscopy. Heat‐light soaking of complete solar cells—having formerly degraded interfaces—recovers the solar cell parameters up to the nondegraded levels. Paradoxically, both the air‐light–induced degradation of bare absorbers and the revision of cell parameters after light annealing go along with a light‐induced segregation of sodium at the Cu(In,Ga)Se₂ surface and Cu(In,Ga)Se₂/CdS interface, respectively.

中文翻译：

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暴露于空气中对Cu（In，Ga）Se2太阳能电池电性能的影响

裸露的Cu（In，Ga）Se ₂暴露于空气中的影响通过测量完整太阳能电池的性能来研究水层。与未照明的吸收体相比，暴露于空气中的吸收体形成的太阳能电池在开路电压，填充系数和效率方面的劣质电池参数约低10％。时间相关和温度相关的开路电压测量结果说明了裸露吸收剂暴露在空气中导致太阳能电池受损的原因是界面复合。界面状态通过导纳光谱法检测。完整太阳能电池的热浸处理（以前具有退化的界面）可将太阳能电池参数恢复到未降解的水平。矛盾的是，₂表面和Cu（In，Ga）Se ₂ / CdS界面。