On the universality of the I–V switching characteristics in non-volatile and volatile resistive switching oxides,Faraday Discussions

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On the universality of the I–V switching characteristics in non-volatile and volatile resistive switching oxides
Faraday Discussions ( IF 3.3 ) Pub Date : 2018-06-19 , DOI: 10.1039/c8fd00116b
Dirk J. Wouters _{1,

2,

3} , Stephan Menzel _{3,

4,

5} , Jonathan A. J. Rupp _{1,

2,

3} , Tyler Hennen _{1,

2,

3} , Rainer Waser _{1,

2,

3,

4,

5}

Affiliation

The I–V switching curves of bipolar switching non-volatile ReRAM devices show peculiar characteristics, such as an abrupt ON switching and the existence of a universal switching voltage. This switching behavior has been explained by the presence of a filamentary process, in which the width of a conductive filament changes during switching resulting in different resistance states. Vice versa, similar (ON) switching behavior, e.g. that of volatile switching Cr-doped V₂O₃ devices, has been interpreted as an indication of the presence of similar filamentary switching. In this paper, we want to review the correlation between filamentary (width) switching and the (SET) I–V characteristics by discussing the existing models. For the Cr-doped V₂O₃ devices, on the other hand, it is argued that a different, constant filament width switching mode may be present.

中文翻译：

上的普遍性我- V开关特性在非易失性和易失性电阻开关氧化物

双极性开关非易失性ReRAM器件的I – V开关曲线显示出特殊的特性，例如突然的ON开关和通用开关电压的存在。这种开关行为已通过存在丝状过程进行了解释，其中导电丝的宽度在开关过程中发生变化，从而导致不同的电阻状态。反之亦然，类似的（ON）开关行为，例如易失性的Cr掺杂的V ₂ O ₃器件的开关行为，已被解释为存在类似的丝状开关的指示。在本文中，我们想回顾一下丝状（宽度）转换与（SET）I之间的相关性。–通过讨论现有模型获得V特性。另一方面，对于Cr掺杂的V ₂ O ₃器件，认为可能存在不同的，恒定的灯丝宽度切换模式。

更新日期：2019-02-19

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