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Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2018-09-01 , DOI: 10.1016/j.jcrysgro.2018.06.017
Lei Wang , Takashi Horiuchi , Atsushi Sekimoto , Yasunori Okano , Toru Ujihara , Sadik Dost

Abstract A set of numerical simulations were conducted to investigate the effect of applied static magnetic field on the convective flows and carbon concentration in the Top-Seeded Solution Growth (TSSG) process of SiC. The applied magnetic field is considered as vertical and cusp in an axisymmetric configuration. Seed rotation was also included in the simulations. The numerical results show that the applications of VMF (vertical magnetic field) and weak CMF (cusp magnetic field) are effective in suppressing Marangoni convection. The application of VMF slows down growth rate but reduces the variation of growth rate towards a more constant rate. Seed rotation appears to be not beneficial in the presence of CMF alone. However, the combined effect of seed rotation with VMF enhances growth and makes the growth rate variation smaller.

中文翻译:

静磁场对碳化硅TSSG生长影响的数值研究

摘要 为了研究外加静磁场对碳化硅顶部晶种溶液生长 (TSSG) 过程中对流流动和碳浓度的影响,进行了一组数值模拟。施加的磁场被认为是轴对称配置中的垂直和尖端。种子轮作也包括在模拟中。数值结果表明VMF(垂直磁场)和弱CMF(尖点磁场)的应用对抑制Marangoni对流是有效的。VMF 的应用减慢了增长率,但减少了增长率向更恒定速率的变化。单独存在 CMF 时,种子轮作似乎无益。然而,种子轮作与 VMF 的联合作用促进了生长并使生长速率变化更小。
更新日期:2018-09-01
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