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Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation
ACS Photonics ( IF 6.5 ) Pub Date : 2018-06-19 00:00:00 , DOI: 10.1021/acsphotonics.8b00538 Haiding Sun , Davide Priante , Jung-Wook Min , Ram Chandra Subedi , Mohammad Khaled Shakfa , Zhongjie Ren , Kuang-Hui Li , Ronghui Lin , Chao Zhao , Tien Khee Ng , Jae-Hyun Ryou 1 , Xixiang Zhang , Boon S. Ooi , Xiaohang Li
ACS Photonics ( IF 6.5 ) Pub Date : 2018-06-19 00:00:00 , DOI: 10.1021/acsphotonics.8b00538 Haiding Sun , Davide Priante , Jung-Wook Min , Ram Chandra Subedi , Mohammad Khaled Shakfa , Zhongjie Ren , Kuang-Hui Li , Ronghui Lin , Chao Zhao , Tien Khee Ng , Jae-Hyun Ryou 1 , Xixiang Zhang , Boon S. Ooi , Xiaohang Li
Affiliation
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High-density dislocations in materials and poor electrical conductivity of p-type AlGaN layers constrain the performance of the ultraviolet light emitting diodes and lasers at shorter wavelengths. To address those technical challenges, we design, grow, and fabricate a novel nanowire structure adopting a graded-index separate confinement heterostructure (GRINSCH) in which the active region is sandwiched between two compositionally graded AlGaN layers, namely, a GRINSCH diode. Calculated electronic band diagram and carrier concentrations show an automatic formation of a p–n junction with electron and hole concentrations of ∼1018 /cm3 in the graded AlGaN layers without intentional doping. The transmission electron microscopy experiment confirms the composition variation in the axial direction of the graded AlGaN nanowires. Significantly lower turn-on voltage of 6.5 V (reduced by 2.5 V) and smaller series resistance of 16.7 Ω (reduced by nearly four times) are achieved in the GRINSCH diode, compared with the conventional p-i-n diode. Such an improvement in the electrical performance is mainly attributed to the effectiveness of polarization-induced n- and p-doping in the compositionally graded AlGaN layers. In consequence, the carrier transport and injection efficiency of the GRINSCH diode are greatly enhanced, which leads to a lower turn-on voltage, smaller series resistance, higher output power, and enhanced device efficiency. The calculated carrier distributions (both electrons and holes) across the active region show better carrier confinement in the GRINSCH diode. Thus, together with the large optical confinement, the GRINSCH diode could offer an unconventional path for the development of solid-state ultraviolet optoelectronic devices, mainly laser diodes of the future.
中文翻译：
梯度折射率分离限制异质结构AlGaN纳米线：紫外激光二极管的实现。
材料中的高密度位错和p型AlGaN层的不良电导率限制了紫外发光二极管和激光器在较短波长下的性能。为了解决这些技术难题，我们设计，生长和制造一种采用渐变折射率分离限制异质结构（GRINSCH）的新型纳米线结构，其中有源区夹在两个成分渐变AlGaN层（即GRINSCH二极管）之间。计算出的电子能带图和载流子浓度显示出自动形成的ap–n结，电子和空穴的浓度约为10 18 / cm 3在梯度AlGaN层中没有故意掺杂。透射电子显微镜实验证实了梯度AlGaN纳米线在轴向上的成分变化。与传统的pin二极管相比，GRINSCH二极管的导通电压明显降低了6.5 V（降低了2.5 V），串联电阻减小了16.7Ω（降低了近四倍）。电性能的这种改善主要归因于在成分渐变的AlGaN层中极化引起的n和p掺杂的有效性。结果，大大提高了GRINSCH二极管的载流子传输和注入效率，这导致了更低的导通电压，更小的串联电阻，更高的输出功率以及更高的器件效率。计算出的整个有源区中的载流子分布（电子和空穴）在GRINSCH二极管中显示出更好的载流子限制。因此，连同较大的光学限制，GRINSCH二极管可以为固态紫外光电器件（主要是未来的激光二极管）的发展提供一条非常规的途径。
更新日期：2018-06-19
中文翻译：
梯度折射率分离限制异质结构AlGaN纳米线：紫外激光二极管的实现。
材料中的高密度位错和p型AlGaN层的不良电导率限制了紫外发光二极管和激光器在较短波长下的性能。为了解决这些技术难题，我们设计，生长和制造一种采用渐变折射率分离限制异质结构（GRINSCH）的新型纳米线结构，其中有源区夹在两个成分渐变AlGaN层（即GRINSCH二极管）之间。计算出的电子能带图和载流子浓度显示出自动形成的ap–n结，电子和空穴的浓度约为10 18 / cm 3在梯度AlGaN层中没有故意掺杂。透射电子显微镜实验证实了梯度AlGaN纳米线在轴向上的成分变化。与传统的pin二极管相比，GRINSCH二极管的导通电压明显降低了6.5 V（降低了2.5 V），串联电阻减小了16.7Ω（降低了近四倍）。电性能的这种改善主要归因于在成分渐变的AlGaN层中极化引起的n和p掺杂的有效性。结果，大大提高了GRINSCH二极管的载流子传输和注入效率，这导致了更低的导通电压，更小的串联电阻，更高的输出功率以及更高的器件效率。计算出的整个有源区中的载流子分布（电子和空穴）在GRINSCH二极管中显示出更好的载流子限制。因此，连同较大的光学限制，GRINSCH二极管可以为固态紫外光电器件（主要是未来的激光二极管）的发展提供一条非常规的途径。
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