Enhanced electrical properties of antimony doped tin oxide thin films deposited via aerosol assisted chemical vapour deposition†,Journal of Materials Chemistry C

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Enhanced electrical properties of antimony doped tin oxide thin films deposited via aerosol assisted chemical vapour deposition†
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2018-06-19 00:00:00 , DOI: 10.1039/c8tc01929k
Sapna D. Ponja _{1,

2,

3,

4,

5} , Benjamin A. D. Williamson _{1,

2,

3,

4,

5} , Sanjayan Sathasivam _{1,

2,

3,

4,

5} , David O. Scanlon _{1,

2,

3,

4,

5} , Ivan P. Parkin _{1,

2,

3,

4,

5} , Claire J. Carmalt _{1,

2,

3,

4,

5}

Affiliation

Transparent conducting oxides have widespread application in modern society but there is a need to move away from the current ‘industry champion’ tin doped indium oxide (In₂O₃:Sn) due to high costs. Antimony doped tin(IV) oxide (ATO) is an excellent candidate but is limited by its opto-electrical properties. Here, we present a novel and scalable synthetic route to ATO thin films that shows excellent electrical properties. Resistivity measurements showed that at 4 at% doping the lowest value of 4.7 × 10⁻⁴ Ω cm was achieved primarily due to a high charge carrier density of 1.2 × 10²¹ cm⁻³. Further doping induced an increase in resistivity due to a decrease in both the carrier density and mobility. Ab initio hybrid density functional theory (DFT) calculations show the thermodynamic basis for the tail off of performance beyond a certain doping level, and the appearance of Sb(III) within the doped thin films.

中文翻译：

通过气溶胶辅助化学气相沉积法沉积的掺锑氧化锡薄膜的电性能增强†

透明导电氧化物已在现代社会中得到广泛应用，但是由于成本高昂，有必要摆脱目前的“行业冠军”掺杂锡的氧化铟（In ₂ O ₃：Sn）。掺锑的氧化锡（IV）（ATO）是一种极好的选择，但受其光电性能的限制。在这里，我们提出了一种新颖且可扩展的合成途径，以显示具有出色的电性能的ATO薄膜。电阻率测量结果表明，掺杂4 at％时，可实现最低值4.7×10 ^-4Ωcm，这主要是由于1.2×10 ²¹ cm ^-3的高载流子密度。由于载流子密度和迁移率的降低，进一步的掺杂引起电阻率的增加。从头算起的混合密度泛函理论（DFT）计算表明，超过一定掺杂水平后性能下降的热力学基础，以及掺杂薄膜中Sb（III）的出现。

更新日期：2018-06-19

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