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Dynamic Impact of Electrode Materials on Interface of Single‐Crystalline Methylammonium Lead Bromide Perovskite
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-06-19 , DOI: 10.1002/admi.201800476 Jeremy T. Tisdale 1 , Eric Muckley 2 , Mahshid Ahmadi 1 , Travis Smith 3 , Cody Seal 3 , Eric Lukosi 3 , Ilia N. Ivanov 2 , Bin Hu 1
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-06-19 , DOI: 10.1002/admi.201800476 Jeremy T. Tisdale 1 , Eric Muckley 2 , Mahshid Ahmadi 1 , Travis Smith 3 , Cody Seal 3 , Eric Lukosi 3 , Ilia N. Ivanov 2 , Bin Hu 1
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One of the current challenges in methylammonium lead halide (MAPbX3) perovskite application research is understanding contact formation and interfacial phenomena for highly efficient and stable device performance. For semiconductors, development of contact formation is inseparable from device performance and stability. Single‐crystalline MAPbX3 has become of great interest for perovskite devices in photodetectors, light‐emitting diodes, and more recently in high‐energy radiation detection. Deeper research is required to understand interfacial interactions in single‐crystalline MAPbX3. This article focuses on the dynamic impact of electrode metal (Au and Cr) on methylammonium lead bromide (MAPbBr3) single crystals. It is studied how charge transport properties of single crystal MAPbBr3 can be tuned via electrode material selection at the metal/MAPbBr3 interface to improve device performance with proper contact formation. The ability to create an ohmic‐like or nonohmic contact by switching the electrode metal from Cr to Au, respectively, is demonstrated. It is observed that the interfacial charge transfer resistance (recombination resistance) of the Cr/MAPbBr3 interface is 1.79 × 109 Ω, compared to 1.32 × 107 Ω for the Au/MAPbBr3. Cr contacts can reduce hysteretic behavior by reducing interfacial recombination and interfacial polarization. These studies provide insight to metal/MAPbX3 interfacial interactions toward device engineering for hole transport layer‐free MAPbX3 device structures.
中文翻译：
电极材料对单结晶甲基铵溴化铅钙钛矿界面的动态影响
甲基铵卤化铅铅（MAPbX 3）钙钛矿应用研究中的当前挑战之一是了解接触形成和界面现象，以实现高效，稳定的器件性能。对于半导体，接触形成的发展与器件性能和稳定性密不可分。单晶MAPbX 3在光电探测器，发光二极管以及最近在高能辐射探测中的钙钛矿设备中引起了极大的兴趣。需要更深入的研究来了解单晶MAPbX 3中的界面相互作用。本文重点介绍电极金属（Au和Cr）对甲基铵溴化铅（MAPbBr 3）的动态影响。）单晶。研究了如何通过在金属/ MAPbBr 3界面上选择电极材料来调整单晶MAPbBr 3的电荷传输性能，从而通过适当的接触形成来改善器件性能。展示了通过将电极金属分别从Cr切换到Au来创建类似欧姆或非欧姆接触的能力。据观察，界面电荷转移电阻在Cr / MAPbBr的（重组电阻）3界面是1.79×10 9 Ω，相比于1.32×10 7 Ω的金/ MAPbBr 3。Cr触点可通过减少界面复合和界面极化来减少磁滞行为。这些研究为无空穴传输层MAPbX 3器件结构的器件工程中的金属/ MAPbX 3界面相互作用提供了见识。
更新日期：2018-06-19
中文翻译：
电极材料对单结晶甲基铵溴化铅钙钛矿界面的动态影响
甲基铵卤化铅铅（MAPbX 3）钙钛矿应用研究中的当前挑战之一是了解接触形成和界面现象，以实现高效，稳定的器件性能。对于半导体，接触形成的发展与器件性能和稳定性密不可分。单晶MAPbX 3在光电探测器，发光二极管以及最近在高能辐射探测中的钙钛矿设备中引起了极大的兴趣。需要更深入的研究来了解单晶MAPbX 3中的界面相互作用。本文重点介绍电极金属（Au和Cr）对甲基铵溴化铅（MAPbBr 3）的动态影响。）单晶。研究了如何通过在金属/ MAPbBr 3界面上选择电极材料来调整单晶MAPbBr 3的电荷传输性能，从而通过适当的接触形成来改善器件性能。展示了通过将电极金属分别从Cr切换到Au来创建类似欧姆或非欧姆接触的能力。据观察，界面电荷转移电阻在Cr / MAPbBr的（重组电阻）3界面是1.79×10 9 Ω，相比于1.32×10 7 Ω的金/ MAPbBr 3。Cr触点可通过减少界面复合和界面极化来减少磁滞行为。这些研究为无空穴传输层MAPbX 3器件结构的器件工程中的金属/ MAPbX 3界面相互作用提供了见识。
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