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Defect‐Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes
Advanced Materials ( IF 27.4 ) Pub Date : 2018-06-19 , DOI: 10.1002/adma.201801773
Jianyun Zheng 1 , Yanhong Lyu 1 , Chao Xie 1 , Ruilun Wang 1 , Li Tao 1 , Haibo Wu 2 , Huaijuan Zhou 2 , Sanping Jiang 3 , Shuangyin Wang 1
Affiliation  

Silicon (Si) requires a protection layer to maintain stable and long‐time photoanodic reaction. However, poor charge separation and transfer are key constraint factors in protection layer/Si photoanodes that reduce their water‐splitting efficiency. Here, a simultaneous enhancement of charge separation and transfer in Nb‐doped NiOx/Ni/black‐Si photoanodes induced by plasma treatment is reported. The optimized photoanodes yield the highest charge‐separation efficiency (ηsep) of ≈81% at 1.23 V versus reversible hydrogen electrode, corresponding to the photocurrent density of ≈29.1 mA cm−2. On the basis of detailed characterizations, the concentration and species of oxygen defects in the NiOx‐based layer are adjusted by synergistic effect of Nb doping and plasma treatment, which are the dominating factors for forming suitable band structure and providing a favorable hole‐migration channel. This work elucidates the important role of oxygen defects on charge separation and transfer in the protection layer/Si‐based photoelectrochemical systems and is encouraging for application of this synergistic strategy to other candidate photoanodes.

中文翻译:

光电阳极保护层/半导体结构内缺陷增强的电荷分离和转移

硅(Si)需要保护层以维持稳定且长时间的光阳极反应。但是,不良的电荷分离和转移是保护层/ Si光电阳极降低其水分解效率的关键制约因素。在此,据报道,等离子体处理诱导的掺Nb的NiO x / Ni / black-Si光阳极中电荷分离和转移同时增强。优化的光阳极产生最高的电荷分离效率(η的≈81%)在的1.23V相对于可逆氢电极,对应于≈29.1毫安厘米光电流密度-2。根据详细的表征,NiO x中氧缺陷的浓度和种类Nb掺杂和等离子体处理的协同作用可调整基层,这是形成合适的能带结构并提供良好的空穴迁移通道的主要因素。这项工作阐明了氧缺陷在保护层/基于硅的光电化学系统中对电荷分离和转移的重要作用,并鼓励将该协同策略应用于其他候选光阳极。
更新日期:2018-06-19
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