This paper presents highly sensitive pressure sensors using piezoresistive nanowires. Our approach is based on nanowires locally fabricated on free standing structures with a high strain concentration. This strain concentration phenomenon amplifies the strain induced into nano-scaled sensing elements while the bulk materials are still at small strain regime, therefore enhancing the sensitivity of the sensors. For proof of concept, we utilized SiC nanowire fabricated using focused ion beam from an epitaxially grown thin film. Experimental results show significant 3-fold enhancement in the sensitivity in comparison to conventional structures, which is in good agreement with analytical modeling and numerical simulation. The proposed design shows potential for the development of miniaturized highly sensitive but robust nano mechanical-sensors.

中文翻译：

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采用在独立结构上制造的 3C-SiC 纳米线的高灵敏度压力传感器

本文介绍了使用压阻纳米线的高灵敏度压力传感器。我们的方法基于在具有高应变浓度的独立结构上局部制造的纳米线。这种应变集中现象放大了纳米级传感元件中的应变，而块状材料仍处于小应变状态，因此提高了传感器的灵敏度。为了验证概念，我们使用了使用外延生长薄膜的聚焦离子束制造的 SiC 纳米线。实验结果表明，与传统结构相比，灵敏度显着提高了 3 倍，这与分析建模和数值模拟非常吻合。所提出的设计显示了开发小型化高灵敏度但坚固的纳米机械传感器的潜力。