Recently, metal halide perovskite quantum dots (QDs) have been becoming a kind of promising efficient luminescent material and drawn remarkable attention in the development of light-emitting devices. However, during the fabrication process of perovskite QDs based light emitting diodes (Pe-QLED), the vacuum processing is necessary for constructing of perovskite QDs/charge transport layer (CTL) structure. Taking the large-scale production into consideration, the all-solution processed Pe-QLED have great potential, but remain great challenge. Herein, we show that by employing hydrofluoroethers (such as HFE 7100) as the orthogonal solvent, the perovskite QDs/CTL multilayer structure can be effectively obtained via solution process, thus promoting the successful fabrication of all-solution Pe-QLED. Through the surface fluorous ligand modification, ZnO nanoparticles (NPs) are directly dispersed in HFE 7100 and used for solution processed electron transport layer. As the result, all-solution processed CsPbBr₃ Pe-QLEDs have been realized with the performance of a luminance of 1661 cd/m², a peak EQE of 0.37%, and a peak CE of 0.72 cd/A. These results indicate that our strategy is highly effective in the development of high-performance all-solution processed perovskite based optoelectronic devices.

近来，金属卤化物钙钛矿量子点（QD）已经成为一种有前途的有效发光材料，并且在发光器件的开发中引起了极大的关注。然而，在基于钙钛矿QD的发光二极管（Pe-QLED）的制造过程中，真空处理对于构造钙钛矿QD /电荷传输层（CTL）结构是必需的。考虑到大规模生产，全溶液处理的Pe-QLED具有巨大的潜力，但仍然是巨大的挑战。在本文中，我们表明，通过使用氢氟醚（例如HFE 7100）作为正交溶剂，可以通过溶液法有效地获得钙钛矿QDs / CTL多层结构，从而促进了全溶液Pe-QLED的成功制造。通过表面氟配体的修饰，ZnO纳米颗粒（NPs）直接分散在HFE 7100中，并用于溶液处理的电子传输层。结果，经过全溶液处理的CsPbBr已经实现了_3个Pe-QLED，其具有1661cd / m ²的亮度，0.37％的峰值EQE和0.72cd / A的峰值CE的性能。这些结果表明，我们的策略在开发高性能全溶液加工钙钛矿基光电器件方面非常有效。