Abstract The early stages of close spaced sublimation growth of CdZnTe(0 0 1)/GaAs(0 0 1) epilayer were experimentally studied under different substrate temperatures and ambient pressures. SEM, AFM, XRD, EBSD and EDS were used for the characterization of morphology, structure and composition of the films. The films were found to be (0 0 1) oriented and epitaxial in nature with zinc blende cubic structure. Deposition models were used to explain the correlation between growth condition and CdZnTe island morphology. Films grown at 350 °C and 1 × 102 Pa show the best uniform and smooth surface. When increasing substrate temperature to 430 °C or ambient pressure to 1 × 104 Pa or 3 × 104 Pa, islands are less compact and exhibit preferential growth along one of 〈1 1 0〉 directions, which could be resulted from the big lattice mismatch (14.0%) of Cd0.9Zn0.1Te(0 0 1)/GaAs(0 0 1) heterojunction. For the growth at 430 °C in 3 × 104 Pa, prior nucleation at defect site was found, and the appearance of regular 〈0 1 0〉 oriented island edges proposes that steps 〈0 1 0〉{1 0 0} are more stable for CdZnTe(0 0 1)/GaAs(0 0 1) epilayer than steps 〈1 1 0〉{1 1 1}.

中文翻译：

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GaAs(001) 衬底上 CdZnTe(001) 外延膜的成核和岛状生长

摘要 实验研究了CdZnTe(0 0 1)/GaAs(0 0 1) 外延层在不同衬底温度和环境压力下近距升华生长的早期阶段。SEM、AFM、XRD、EBSD 和 EDS 用于表征薄膜的形貌、结构和组成。发现薄膜具有（0 0 1）取向和外延性质，具有闪锌矿立方结构。沉积模型用于解释生长条件与 CdZnTe 岛形态之间的相关性。在 350 °C 和 1 × 102 Pa 下生长的薄膜显示出最好的均匀和光滑的表面。当衬底温度增加到 430 °C 或环境压力增加到 1 × 104 Pa 或 3 × 104 Pa 时，岛不太紧凑并且沿着<1 1 0> 方向之一表现出优先生长，这可能是由于大的晶格失配（ 14.0%) 的 Cd0.9Zn0。1Te(0 0 1)/GaAs(0 0 1) 异质结。对于在 3 × 104 Pa 条件下在 430 °C 下的生长，发现了缺陷位置的先验成核，并且规则<0 1 0> 取向的岛边缘的出现表明步骤 <0 1 0>{1 0 0} 更稳定对于 CdZnTe(0 0 1)/GaAs(0 0 1) 外延层，比步骤 〈1 1 0〉{1 1 1}。