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Phosphorus-doped TiO2-B nanowire arrays boosting robust pseudocapacitive properties for lithium storage
Journal of Power Sources ( IF 8.1 ) Pub Date : 2018-06-15 , DOI: 10.1016/j.jpowsour.2018.06.012
Minglei Cao , Leiming Tao , Xiaowei Lv , Yi Bu , Man Li , Hong Yin , Mingqiang Zhu , Zhicheng Zhong , Yan Shen , Mingkui Wang

TiO2-B has received increasing interest as a possible anode for lithium-ion batteries, but its properties are restricted by the intrinsically low electronic conductivity. Herein, we first demonstrate that phosphorus doping can be an efficient approach to boost the pseudocapacitive properties of TiO2-B nanowire arrays. The phosphorus doping not only promotes electronic conductivity of TiO2-B nanowire arrays by modifying their electronic structure, but also significantly enhances the electrochemical surface reactivity. Density functional theory calculations further reveal that the phosphorus doping could improve the surface lithium affinity of TiO2-B nanowire arrays. Consequently the phosphorus-doped TiO2-B nanowire arrays simultaneously exhibit high reversible capacity (350.9 mAh g−1), remarkable rate capability (142.6 mAh g−1 at 30 C), and impressive cyclability (approximately 80% capacity retention efficiency over 3000 continuous cycles at 10 C), holding promise in high-energy and high-power lithium-ion batteries application.



中文翻译:

磷掺杂的TiO 2 -B纳米线阵列增强了锂存储的鲁棒伪电容特性

TiO 2 -B作为锂离子电池可能的阳极已受到越来越多的关注,但其特性受到固有的低电子电导率的限制。在这里,我们首先证明磷掺杂可以是提高TiO 2 -B纳米线阵列的伪电容特性的有效方法。磷掺杂不仅可以通过改变电子结构来提高TiO 2 -B纳米线阵列的电导率,而且可以显着提高电化学表面反应性。密度泛函理论计算进一步表明,磷掺杂可以提高TiO 2 -B纳米线阵列的表面锂亲和力。因此,掺磷的TiO 2-B纳米线阵列同时展现出高可逆容量(350.9 mAh g -1),出色的速率容量( 30 C时为142.6 mAh g -1)和令人印象深刻的可循环性(在10 C的3000个连续循环中约80%的容量保持效率),在高能大功率锂离子电池应用中具有广阔的前景。

更新日期:2018-06-15
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