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Study on the effects of carrier and modifier on mercury adsorption behavior over halides modified sorbents using temperature programmed desorption method
Fuel Processing Technology ( IF 7.2 ) Pub Date : 2018-09-01 , DOI: 10.1016/j.fuproc.2018.06.008
Yang Xu , Xiaobo Zeng , Guangqian Luo , Yongqing Xu , Xian Li , Hong Yao

Abstract Halides modified sorbents injection equipped with dust removal units is considered as the most promising technology for elemental mercury (Hg0) removal from coal-fired flue gas. However, Hg0 adsorption behavior over different halides modified sorbents remains controversial. In this study, the effects of carriers (activated carbon and neutral Al2O3) and modifiers (NaCl, NaBr, CuCl2, and CuBr2) on the behavior of Hg0 adsorption over modified sorbents were investigated using temperature programmed desorption (TPD) method. Both mercury adsorption experiments and TPD experiments were conducted in the bench-scale fixed bed. The results indicated that CuBr2-modified activated carbon (AC) showed the best mercury removal performance due to the lower bond energy of CuBr2. The decomposition temperature of mercury compounds generated on AC was different from that on neutral Al2O3. Further analysis indicated that the modifiers with lower bond energy could release halogens during modification. The released halogens could react with AC to form active C Cl or C Br group. Moreover, the lower bond energy of modifiers made it easier for halogens to release. But Al2O3 carrier could not react with modifiers to form active group during modification. The Hg0 adsorption process over modified Al2O3 could be explained by Langmuir-Hinshelwood mechanism.

中文翻译:

用程序升温脱附法研究载体和改性剂对卤化物改性吸附剂汞吸附行为的影响

摘要 配备除尘装置的卤化物改性吸附剂喷射被认为是从燃煤烟气中去除元素汞(Hg0)最有前途的技术。然而,Hg0 对不同卤化物改性吸附剂的吸附行为仍然存在争议。在本研究中,使用程序升温脱附 (TPD) 方法研究了载体(活性炭和中性 Al2O3)和改性剂(NaCl、NaBr、CuCl2 和 CuBr2)对改性吸附剂吸附 Hg0 行为的影响。汞吸附实验和 TPD 实验均在实验室规模的固定床中进行。结果表明,由于 CuBr2 的键能较低,CuBr2 改性活性炭 (AC) 表现出最佳的除汞性能。AC上产生的汞化合物的分解温度与中性Al2O3上的分解温度不同。进一步分析表明,键能较低的改性剂在改性过程中会释放卤素。释放的卤素可与 AC 反应形成活性 C Cl 或 C Br 基团。此外,改性剂较低的键能使得卤素更容易释放。但是Al2O3载体在改性过程中不能与改性剂反应形成活性基团。改性Al2O3 上Hg0 的吸附过程可以用Langmuir-Hinshelwood 机制来解释。改性剂较低的键能使得卤素更容易释放。但是Al2O3载体在改性过程中不能与改性剂反应形成活性基团。改性Al2O3 上Hg0 的吸附过程可以用Langmuir-Hinshelwood 机制来解释。改性剂较低的键能使得卤素更容易释放。但是Al2O3载体在改性过程中不能与改性剂反应形成活性基团。改性Al2O3 上Hg0 的吸附过程可以用Langmuir-Hinshelwood 机制来解释。
更新日期:2018-09-01
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