The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large‐area electronics, particularly thin‐film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High‐permittivity (κ) oxide dielectrics are a key component for achieving low‐voltage and high‐performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO₂ with high‐κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low‐cost devices, tremendous efforts have been devoted to vacuum‐free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high‐κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high‐κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO₂ is outlined. Recent achievements of solution‐processed high‐κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water‐induced, self‐combustion reaction, and energy‐assisted post treatments, for the realization of flexible electronics and circuits are discussed.

中文翻译：

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新兴晶体管和电路的固溶处理金属氧化物高κ电介质

金属氧化物的电子功能包括导体，半导体和绝缘体。金属氧化物因其高的光学透明性，出色的化学和热稳定性以及机械耐受性而引起了人们对大面积电子设备尤其是薄膜晶体管（TFT）的兴趣。高介电常数（κ）氧化物电介质是实现低压和高性能TFT的关键组件。随着互补金属氧化物半导体晶体管集成度的不断提高，SiO ₂的替代迫切需要使用高κ氧化物电介质，因为它们提供的较厚的层抑制了量子机械隧穿。对于低成本设备，已经在无真空，可溶液处理的制造方面进行了巨大的努力，例如旋涂，喷涂热解和印刷技术。这篇综述集中在溶液处理的高κ氧化物电介质及其在新兴TFT中的应用方面的最新进展。首先，介绍了高κ氧化物电介质的历史，基本原理，理论和漏电流机理，以及与常规SiO _2相比提高迁移率的潜在机理。概述。总结了固溶高κ氧化物材料的最新成就及其在TFT中的应用，并介绍了传统的涂覆方法和新兴的印刷技术。最后，讨论了实现柔性电子电路的低温方法，例如环保的水诱导，自燃反应和能量辅助后处理。