Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits,Advanced Materials

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Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits
Advanced Materials ( IF 27.4 ) Pub Date : 2018-06-14 , DOI: 10.1002/adma.201706364
Ao Liu ₁ , Huihui Zhu ₁ , Huabin Sun ₁ , Yong Xu ₁ , Yong-Young Noh ₁

Affiliation

The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large‐area electronics, particularly thin‐film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High‐permittivity (κ) oxide dielectrics are a key component for achieving low‐voltage and high‐performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO₂ with high‐κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low‐cost devices, tremendous efforts have been devoted to vacuum‐free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high‐κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high‐κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO₂ is outlined. Recent achievements of solution‐processed high‐κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water‐induced, self‐combustion reaction, and energy‐assisted post treatments, for the realization of flexible electronics and circuits are discussed.

中文翻译：

用于新兴晶体管和电路的溶液处理金属氧化物高κ电介质

金属氧化物的电子功能包括导体、半导体和绝缘体。金属氧化物因其高光学透明度、优异的化学和热稳定性以及机械耐受性而在大面积电子器件，特别是薄膜晶体管（TFT）的构建中引起了极大的兴趣。高介电常数 (κ) 氧化物电介质是实现低电压和高性能 TFT 的关键组件。随着互补金属氧化物半导体晶体管集成度的不断扩大，迫切需要用高κ氧化物电介质取代SiO ₂ ，因为它们提供的更厚的层抑制了量子力学隧道效应。为了实现低成本器件，人们在无真空、可溶液加工的制造方面付出了巨大的努力，例如旋涂、喷雾热解和印刷技术。本综述重点关注溶液加工高 K 氧化物电介质的最新进展及其在新兴 TFT 中的应用。首先，介绍了高κ氧化物电介质的历史、基础知识、理论和漏电流机制，并概述了相对于传统SiO ₂迁移率增强的基本机制。总结了溶液加工高κ氧化物材料的最新成就及其在TFT中的应用，并介绍了传统的涂覆方法和新兴的印刷技术。最后，讨论了用于实现柔性电子和电路的低温方法，例如环保水诱导、自燃烧反应和能量辅助后处理。

更新日期：2018-06-14

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