Abstract In this work, we report on fabrication of a solar blind phototransistor based on ZnO Nanorods (NRs) integrated into InGaZnO4 (IGZO) substrate to obtain highly sensitive UV detection in solar blind spectrum. Highly efficient solar-blind UV detection can be demonstrated in this phototransistor with the photo-responsivity (R) of 1.9 × 105 A/W, quantum efficiency (EQE) of 8.7 × 107%, photo-sensitivity of ∼9.5 × 105 and photo-detectivity of ∼8.12 × 1016 Jones, respectively, irradiated with the 280 nm incident light. The results imply that ZnO NRs/IGZO phototransistor with laser annealing is a promising candidate for the development of highly sensitive solar-blind photodetector.

中文翻译：

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基于激光退火ZnO纳米棒/IGZO异质结构的高灵敏度日盲光电晶体管

摘要 在这项工作中，我们报告了基于集成到 InGaZnO4 (IGZO) 衬底中的 ZnO 纳米棒 (NRs) 的日盲光电晶体管的制造，以获得日盲光谱中的高灵敏度紫外检测。该光电晶体管可以证明高效的日盲紫外检测，其光响应度 (R) 为 1.9 × 105 A/W，量子效率 (EQE) 为 8.7 × 107%，光敏度约为 9.5 × 105 和光- 分别为~8.12 × 1016 Jones 的探测率，用 280 nm 入射光照射。结果表明，具有激光退火的 ZnO NRs/IGZO 光电晶体管是开发高灵敏度日盲光电探测器的有希望的候选者。