For crystalline-silicon (c-Si) solar cells, the interdigitated back contact (IBC) structure has been long known as an efficient way to approach the theoretical limit of efficiency. However, the complexity of fabricating this kind of devices as well as the high dependence on expensive vacuum systems pose concerns about their commercial potential. Here, we demonstrate a novel c-Si IBC solar cell featuring dopant-free heterocontacts for both polarities, i.e. a solution-proceeded PEDOT:PSS film as hole-transporting layer (HTL) and an evaporated magnesium-oxide film as electron-transporting layer (ETL). Our innovatively buried ETL method provides substantial simplification on the architecture and fabrication of the IBC cells and makes it possible to adapt solution-proceeded HTLs while keeping good passivation in gap regions. The IBC solar cell shows an efficiency of 16.3%, with a promising short-circuit current density (J_sc) up to 38.4 mA/cm². A thorough simulation concerning the influence of pitch size, surface recombination rate (at ETL and gap regions) was conducted, revealing a readily achievable J_sc of 41 mA/${\mathrm{cm}}^2$ and a PCE beyond 22%. Our findings demonstrated a feasibility of using solution method to fabricate high efficiency dopant-free IBC solar cells.

对于晶体硅（c-Si）太阳能电池，叉指式背接触（IBC）结构一直是一种接近效率理论极限的有效方法。然而，制造这种装置的复杂性以及对昂贵真空系统的高度依赖引起了对其商业潜力的关注。在这里，我们演示了一种新颖的c-Si IBC太阳能电池，其两个极性均具有无掺杂异质接触，即溶液处理的PEDOT：PSS膜作为空穴传输层（HTL），而蒸发的氧化镁膜作为电子传输层（ETL）。我们创新的埋入式ETL方法极大地简化了IBC电池的结构和制造，并使得适应溶液处理的HTL成为可能，同时在间隙区域保持良好的钝化。J _sc）高达38.4 mA / cm ²。进行了有关间距大小，表面复合速率（在ETL和间隙区域）的影响的全面模拟，发现易于实现的J _sc为41 mA /${\mathrm{厘米}}^{\mathrm{2个}}$PCE超过22％。我们的发现证明了使用溶液法制造高效无掺杂IBC太阳能电池的可行性。