With the rapid development of modern semiconductor industry, power free or self-powered devices become an indispensable part in the electronic components and optoelectronic products. Epitaxial connected TMDs lateral heterojunctions with the maximum built-in potential at the hetero-interface offer fast separation of the photo-generated electron-hole (e-h) pairs without an external bias, which make them promising for self-powered devices. However, so far, the photovoltaic performance of such structures are rarely studied. Here, we report the photovoltaic light sensors based on individual monolayer MoS₂-WS₂ in-plane heterostructures that were created through a one-step synthesis strategy. The in situ second-harmonic generation (SHG) characterizations of this monolayer in-plane heterostructures directly demonstrate their underlying symmetry and high orientation. The photovoltaic photodetectors designed on individual MoS₂-WS₂ in-plane samples that operate in a self-powered mode (zero bias) exhibits a spectral responsivity (R_λ) of 4.36 mA/W and detectivity (D*) of 4.36 × 10¹³ Jones under 28.64 mW/cm² @ 532 nm. The primary characteristics of the lateral heterostructure devices are attributed to the built-in potential at the interface. The initial self-powered light sensor in a monolayer heterostructures combined with the scalable growth can be further applied in other 2D heterostructures.

随着现代半导体工业的飞速发展，无电源或自供电设备已成为电子元器件和光电产品中不可或缺的部分。外来连接的TMD的横向异质结在异质界面处具有最大的内置电势，可快速分离光生电子-空穴对（eh），而无需外部偏置，这使它们有望用于自供电器件。然而，到目前为止，很少研究这种结构的光伏性能。在这里，我们报告基于单个单层MoS ₂ -WS ₂的光伏光传感器通过一步合成策略创建的平面内异质结构。这种单层平面内异质结构的原位二次谐波产生（SHG）表征直接证明了其潜在的对称性和高取向性。设计上个别的MoS光伏光电检测器₂ -WS ₂的面内的样品，在自供电模式（零个偏压）操作显示出的光谱响应（R _λ的4.36×104.36毫安/ W）和探测（d *）¹³琼斯在28.64 mW / cm ^2以下@ 532 nm。横向异质结构器件的主要特性归因于界面处的内置电势。结合可伸缩增长的单层异质结构中的初始自供电光传感器可以进一步应用于其他2D异质结构中。